P

Inventor

CHAN SIMON SIU-SING

US27 patents
⚠️ This page may combine multiple inventors who share the name “CHAN SIMON SIU-SING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

16 patents
US7456062B1Nov 25, 2008

Method of forming a semiconductor device

ADVANCED MICRO DEVICES INC25 citations93
US6670259B1Dec 30, 2003

Inert atom implantation method for SOI gettering

ADVANCED MICRO DEVICES INC25 citations92
US6624476B1Sep 23, 2003

Semiconductor-on-insulator (SOI) substrate having selective dopant implant in insulator layer and method of fabricating

ADVANCED MICRO DEVICES INC28 citations92
US7670915B1Mar 2, 2010

Contact liner in integrated circuit technology

ADVANCED MICRO DEVICES INC9 citations84
US6743666B1Jun 1, 2004

Selective thickening of the source-drain and gate areas of field effect transistors

ADVANCED MICRO DEVICES INC15 citations84
US7064067B1Jun 20, 2006

Reduction of lateral silicide growth in integrated circuit technology

ADVANCED MICRO DEVICES INC11 citations83
US6964875B1Nov 15, 2005

Array of gate dielectric structures to measure gate dielectric thickness and parasitic capacitance

ADVANCED MICRO DEVICES INC15 citations83
US7015076B1Mar 21, 2006

Selectable open circuit and anti-fuse element, and fabrication method therefor

ADVANCED MICRO DEVICES INC10 citations74
US6737337B1May 18, 2004

Method of preventing dopant depletion in surface semiconductor layer of semiconductor-on-insulator (SOI) device

ADVANCED MICRO DEVICES INC12 citations74
US6537866B1Mar 25, 2003

Method of forming narrow insulating spacers for use in reducing minimum component size

ADVANCED MICRO DEVICES INC7 citations74
US6969678B1Nov 29, 2005

Multi-silicide in integrated circuit technology

ADVANCED MICRO DEVICES INC8 citations72
US6841832B1Jan 11, 2005

Array of gate dielectric structures to measure gate dielectric thickness and parasitic capacitance

ADVANCED MICRO DEVICES INC6 citations72
US7023059B1Apr 4, 2006

Trenches to reduce lateral silicide growth in integrated circuit technology

ADVANCED MICRO DEVICES INC6 citations62
US7005357B2Feb 28, 2006

Low stress sidewall spacer in integrated circuit technology

ADVANCED MICRO DEVICES INC2 citations62
US7250667B2Jul 31, 2007

Selectable open circuit and anti-fuse element

ADVANCED MICRO DEVICES INC0 citations52
US7132352B1Nov 7, 2006

Method of eliminating source/drain junction spiking, and device produced thereby

ADVANCED MICRO DEVICES INC0 citations51

CYPRESS SEMICONDUCTOR CORP

4 patents

CHAN SIMON SIU-SING

3 patents

SPANSION LLC

2 patents

Infineon Technologies LLC

1 patent

GLOBALFOUNDRIES INC

1 patent