Inventor
LEE SOO-GEUN
KR25 patents
⚠️ This page may combine multiple inventors who share the name “LEE SOO-GEUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
21 patentsUS6861686B2Mar 1, 2005
Structure of a CMOS image sensor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD103 citations98
US7400003B2Jul 15, 2008
Structure of a CMOS image sensor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD12 citations92
US7183195B2Feb 27, 2007
Method of fabricating dual damascene interconnections of microelectronic device using hybrid low k-dielectric and carbon-free inorganic filler
SAMSUNG ELECTRONICS CO LTD24 citations92
US6861347B2Mar 1, 2005
Method for forming metal wiring layer of semiconductor device
SAMSUNG ELECTRONICS CO LTD31 citations92
US6828229B2Dec 7, 2004
Method of manufacturing interconnection line in semiconductor device
SAMSUNG ELECTRONICS CO LTD33 citations92
US6329276B1Dec 11, 2001
Method of forming self-aligned silicide in semiconductor device
SAMSUNG ELECTRONICS CO LTD44 citations90
US7279733B2Oct 9, 2007
Dual damascene interconnection with metal-insulator-metal-capacitor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7205666B2Apr 17, 2007
Interconnections having double capping layer and method for forming the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US6953745B2Oct 11, 2005
Void-free metal interconnection structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD17 citations84
US6855629B2Feb 15, 2005
Method for forming a dual damascene wiring pattern in a semiconductor device
SAMSUNG ELECTRONICS CO LTD12 citations84
US6815331B2Nov 9, 2004
Method for forming metal wiring layer of semiconductor device
SAMSUNG ELECTRONICS CO LTD20 citations84
US6849536B2Feb 1, 2005
Inter-metal dielectric patterns and method of forming the same
SAMSUNG ELECTRONICS CO LTD12 citations82
US7462507B2Dec 9, 2008
Structure of a CMOS image sensor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7605472B2Oct 20, 2009
Interconnections having double capping layer and method for forming the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US7022600B2Apr 4, 2006
Method of forming dual damascene interconnection using low-k dielectric material
SAMSUNG ELECTRONICS CO LTD10 citations72
US7399700B2Jul 15, 2008
Dual damascene interconnection with metal-insulator-metal capacitor and method of fabricating
SAMSUNG ELECTRONICS CO LTD2 citations63
US7041592B2May 9, 2006
Method for forming a metal interconnection layer of a semiconductor device using a modified dual damascene process
SAMSUNG ELECTRONICS CO LTD2 citations63
US6936533B2Aug 30, 2005
Method of fabricating semiconductor devices having low dielectric interlayer insulation layer
SAMSUNG ELECTRONICS CO LTD6 citations63
US7560332B2Jul 14, 2009
Integrated circuit capacitor structure
SAMSUNG ELECTRONICS CO LTD4 citations62
US7951712B2May 31, 2011
Interconnections having double capping layer and method for forming the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7229875B2Jun 12, 2007
Integrated circuit capacitor structure
SAMSUNG ELECTRONICS CO LTD1 citations52