Inventor
LEE KYOUNG-WOO
KR61 patents
⚠️ This page may combine multiple inventors who share the name “LEE KYOUNG-WOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
41 patentsUS6861686B2Mar 1, 2005
Structure of a CMOS image sensor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD103 citations98
US6158017ADec 5, 2000
Method for storing parity and rebuilding data contents of failed disks in an external storage subsystem and apparatus thereof
SAMSUNG ELECTRONICS CO LTD198 citations96
US6627540B2Sep 30, 2003
Method for forming dual damascene structure in semiconductor device
SAMSUNG ELECTRONICS CO LTD22 citations93
US7911001B2Mar 22, 2011
Methods for forming self-aligned dual stress liners for CMOS semiconductor devices
SAMSUNG ELECTRONICS CO LTD29 citations92
US7534678B2May 19, 2009
Methods of forming CMOS integrated circuit devices having stressed NMOS and PMOS channel regions therein and circuits formed thereby
SAMSUNG ELECTRONICS CO LTD20 citations92
US7400003B2Jul 15, 2008
Structure of a CMOS image sensor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD12 citations92
US7183195B2Feb 27, 2007
Method of fabricating dual damascene interconnections of microelectronic device using hybrid low k-dielectric and carbon-free inorganic filler
SAMSUNG ELECTRONICS CO LTD24 citations92
US6861347B2Mar 1, 2005
Method for forming metal wiring layer of semiconductor device
SAMSUNG ELECTRONICS CO LTD31 citations92
US6828229B2Dec 7, 2004
Method of manufacturing interconnection line in semiconductor device
SAMSUNG ELECTRONICS CO LTD33 citations92
US7687915B2Mar 30, 2010
Semiconductor device having crack stop structure
SAMSUNG ELECTRONICS CO LTD9 citations84
US7598168B2Oct 6, 2009
Method of fabricating dual damascene interconnection and etchant for stripping sacrificial layer
SAMSUNG ELECTRONICS CO LTD9 citations84
US7586175B2Sep 8, 2009
Semiconductor wafer having embedded electroplating current paths to provide uniform plating over wafer surface
SAMSUNG ELECTRONICS CO LTD19 citations84
US7387962B2Jun 17, 2008
Physical vapor deposition methods for forming hydrogen-stuffed trench liners for copper-based metallization
SAMSUNG ELECTRONICS CO LTD9 citations84
US7279733B2Oct 9, 2007
Dual damascene interconnection with metal-insulator-metal-capacitor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7205666B2Apr 17, 2007
Interconnections having double capping layer and method for forming the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US6953745B2Oct 11, 2005
Void-free metal interconnection structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD17 citations84
US6855629B2Feb 15, 2005
Method for forming a dual damascene wiring pattern in a semiconductor device
SAMSUNG ELECTRONICS CO LTD12 citations84
US6815331B2Nov 9, 2004
Method for forming metal wiring layer of semiconductor device
SAMSUNG ELECTRONICS CO LTD20 citations84
US7157366B2Jan 2, 2007
Method of forming metal interconnection layer of semiconductor device
SAMSUNG ELECTRONICS CO LTD12 citations82
US6849536B2Feb 1, 2005
Inter-metal dielectric patterns and method of forming the same
SAMSUNG ELECTRONICS CO LTD12 citations82
US7064059B2Jun 20, 2006
Method of forming dual damascene metal interconnection employing sacrificial metal oxide layer
SAMSUNG ELECTRONICS CO LTD12 citations81
US7462507B2Dec 9, 2008
Structure of a CMOS image sensor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US8384131B2Feb 26, 2013
Semiconductor device and methods of forming the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US7605472B2Oct 20, 2009
Interconnections having double capping layer and method for forming the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US10825766B2Nov 3, 2020
Semiconductor device with multi-layered wiring and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US7022600B2Apr 4, 2006
Method of forming dual damascene interconnection using low-k dielectric material
SAMSUNG ELECTRONICS CO LTD10 citations72
US10341981B2Jul 2, 2019
User terminal device and method for recognizing user'S location using sensor-based behavior recognition
SAMSUNG ELECTRONICS CO LTD3 citations69
US7323407B2Jan 29, 2008
Method of fabricating dual damascene interconnections of microelectronic device using diffusion barrier layer against base material
SAMSUNG ELECTRONICS CO LTD8 citations68
US7781276B2Aug 24, 2010
Methods of forming CMOS integrated circuits that utilize insulating layers with high stress characteristics to improve NMOS and PMOS transistor carrier mobilities
SAMSUNG ELECTRONICS CO LTD4 citations63
US7399700B2Jul 15, 2008
Dual damascene interconnection with metal-insulator-metal capacitor and method of fabricating
SAMSUNG ELECTRONICS CO LTD2 citations63
US7365025B2Apr 29, 2008
Methods of forming dual-damascene interconnect structures on semiconductor substrates using multiple planarization layers having different porosity characteristics
SAMSUNG ELECTRONICS CO LTD2 citations63
US6936533B2Aug 30, 2005
Method of fabricating semiconductor devices having low dielectric interlayer insulation layer
SAMSUNG ELECTRONICS CO LTD6 citations63
US7800134B2Sep 21, 2010
CMOS integrated circuit devices having stressed NMOS and PMOS channel regions therein
SAMSUNG ELECTRONICS CO LTD4 citations62
US7635645B2Dec 22, 2009
Method for forming interconnection line in semiconductor device and interconnection line structure
SAMSUNG ELECTRONICS CO LTD6 citations62
US7560332B2Jul 14, 2009
Integrated circuit capacitor structure
SAMSUNG ELECTRONICS CO LTD4 citations62
US7435673B2Oct 14, 2008
Methods of forming integrated circuit devices having metal interconnect structures therein
SAMSUNG ELECTRONICS CO LTD4 citations62
US7192864B2Mar 20, 2007
Method of forming interconnection lines for semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations62
US7033944B2Apr 25, 2006
Dual damascene process
SAMSUNG ELECTRONICS CO LTD3 citations62
US7816271B2Oct 19, 2010
Methods for forming contacts for dual stress liner CMOS semiconductor devices
SAMSUNG ELECTRONICS CO LTD6 citations61
US11078616B2Aug 3, 2021
Washing machine
SAMSUNG ELECTRONICS CO LTD1 citations60
US7989335B2Aug 2, 2011
Methods of forming insulation layer patterns and methods of manufacturing semiconductor devices including insulation layer patterns
SAMSUNG ELECTRONICS CO LTD0 citations52
LEE KYOUNG-WOO
4 patentsUS8298911B2Oct 30, 2012
Methods of forming wiring structures
LEE KYOUNG-WOO39 citations93
US8232653B2Jul 31, 2012
Wiring structures
LEE KYOUNG-WOO15 citations83
US8697455B2Apr 15, 2014
Monitoring test element groups (TEGs) for etching process and methods of manufacturing a semiconductor device using the same
LEE KYOUNG-WOO2 citations62
US9396988B2Jul 19, 2016
Methods for fabricating semiconductor devices using liner layers to avoid damage to underlying patterns
LEE KYOUNG-WOO2 citations59
LG ELECTRONICS INC
2 patentsSAMSUNG ELECRTONICS CO LTD
1 patentKIM JUN JUNG
1 patentPARK YOUNG HWAN
1 patentShowing the top 50 of 61 patents by PatentIndex Score.