P

Inventor

LEE KYOUNG-WOO

KR61 patents
⚠️ This page may combine multiple inventors who share the name “LEE KYOUNG-WOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

41 patents
US6861686B2Mar 1, 2005

Structure of a CMOS image sensor and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD103 citations98
US6158017ADec 5, 2000

Method for storing parity and rebuilding data contents of failed disks in an external storage subsystem and apparatus thereof

SAMSUNG ELECTRONICS CO LTD198 citations96
US6627540B2Sep 30, 2003

Method for forming dual damascene structure in semiconductor device

SAMSUNG ELECTRONICS CO LTD22 citations93
US7911001B2Mar 22, 2011

Methods for forming self-aligned dual stress liners for CMOS semiconductor devices

SAMSUNG ELECTRONICS CO LTD29 citations92
US7534678B2May 19, 2009

Methods of forming CMOS integrated circuit devices having stressed NMOS and PMOS channel regions therein and circuits formed thereby

SAMSUNG ELECTRONICS CO LTD20 citations92
US7400003B2Jul 15, 2008

Structure of a CMOS image sensor and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD12 citations92
US7183195B2Feb 27, 2007

Method of fabricating dual damascene interconnections of microelectronic device using hybrid low k-dielectric and carbon-free inorganic filler

SAMSUNG ELECTRONICS CO LTD24 citations92
US6861347B2Mar 1, 2005

Method for forming metal wiring layer of semiconductor device

SAMSUNG ELECTRONICS CO LTD31 citations92
US6828229B2Dec 7, 2004

Method of manufacturing interconnection line in semiconductor device

SAMSUNG ELECTRONICS CO LTD33 citations92
US7687915B2Mar 30, 2010

Semiconductor device having crack stop structure

SAMSUNG ELECTRONICS CO LTD9 citations84
US7598168B2Oct 6, 2009

Method of fabricating dual damascene interconnection and etchant for stripping sacrificial layer

SAMSUNG ELECTRONICS CO LTD9 citations84
US7586175B2Sep 8, 2009

Semiconductor wafer having embedded electroplating current paths to provide uniform plating over wafer surface

SAMSUNG ELECTRONICS CO LTD19 citations84
US7387962B2Jun 17, 2008

Physical vapor deposition methods for forming hydrogen-stuffed trench liners for copper-based metallization

SAMSUNG ELECTRONICS CO LTD9 citations84
US7279733B2Oct 9, 2007

Dual damascene interconnection with metal-insulator-metal-capacitor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7205666B2Apr 17, 2007

Interconnections having double capping layer and method for forming the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US6953745B2Oct 11, 2005

Void-free metal interconnection structure and method of forming the same

SAMSUNG ELECTRONICS CO LTD17 citations84
US6855629B2Feb 15, 2005

Method for forming a dual damascene wiring pattern in a semiconductor device

SAMSUNG ELECTRONICS CO LTD12 citations84
US6815331B2Nov 9, 2004

Method for forming metal wiring layer of semiconductor device

SAMSUNG ELECTRONICS CO LTD20 citations84
US7157366B2Jan 2, 2007

Method of forming metal interconnection layer of semiconductor device

SAMSUNG ELECTRONICS CO LTD12 citations82
US6849536B2Feb 1, 2005

Inter-metal dielectric patterns and method of forming the same

SAMSUNG ELECTRONICS CO LTD12 citations82
US7064059B2Jun 20, 2006

Method of forming dual damascene metal interconnection employing sacrificial metal oxide layer

SAMSUNG ELECTRONICS CO LTD12 citations81
US7462507B2Dec 9, 2008

Structure of a CMOS image sensor and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US8384131B2Feb 26, 2013

Semiconductor device and methods of forming the same

SAMSUNG ELECTRONICS CO LTD5 citations73
US7605472B2Oct 20, 2009

Interconnections having double capping layer and method for forming the same

SAMSUNG ELECTRONICS CO LTD5 citations73
US10825766B2Nov 3, 2020

Semiconductor device with multi-layered wiring and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US7022600B2Apr 4, 2006

Method of forming dual damascene interconnection using low-k dielectric material

SAMSUNG ELECTRONICS CO LTD10 citations72
US10341981B2Jul 2, 2019

User terminal device and method for recognizing user'S location using sensor-based behavior recognition

SAMSUNG ELECTRONICS CO LTD3 citations69
US7323407B2Jan 29, 2008

Method of fabricating dual damascene interconnections of microelectronic device using diffusion barrier layer against base material

SAMSUNG ELECTRONICS CO LTD8 citations68
US7781276B2Aug 24, 2010

Methods of forming CMOS integrated circuits that utilize insulating layers with high stress characteristics to improve NMOS and PMOS transistor carrier mobilities

SAMSUNG ELECTRONICS CO LTD4 citations63
US7399700B2Jul 15, 2008

Dual damascene interconnection with metal-insulator-metal capacitor and method of fabricating

SAMSUNG ELECTRONICS CO LTD2 citations63
US7365025B2Apr 29, 2008

Methods of forming dual-damascene interconnect structures on semiconductor substrates using multiple planarization layers having different porosity characteristics

SAMSUNG ELECTRONICS CO LTD2 citations63
US6936533B2Aug 30, 2005

Method of fabricating semiconductor devices having low dielectric interlayer insulation layer

SAMSUNG ELECTRONICS CO LTD6 citations63
US7800134B2Sep 21, 2010

CMOS integrated circuit devices having stressed NMOS and PMOS channel regions therein

SAMSUNG ELECTRONICS CO LTD4 citations62
US7635645B2Dec 22, 2009

Method for forming interconnection line in semiconductor device and interconnection line structure

SAMSUNG ELECTRONICS CO LTD6 citations62
US7560332B2Jul 14, 2009

Integrated circuit capacitor structure

SAMSUNG ELECTRONICS CO LTD4 citations62
US7435673B2Oct 14, 2008

Methods of forming integrated circuit devices having metal interconnect structures therein

SAMSUNG ELECTRONICS CO LTD4 citations62
US7192864B2Mar 20, 2007

Method of forming interconnection lines for semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations62
US7033944B2Apr 25, 2006

Dual damascene process

SAMSUNG ELECTRONICS CO LTD3 citations62
US7816271B2Oct 19, 2010

Methods for forming contacts for dual stress liner CMOS semiconductor devices

SAMSUNG ELECTRONICS CO LTD6 citations61
US11078616B2Aug 3, 2021

Washing machine

SAMSUNG ELECTRONICS CO LTD1 citations60
US7989335B2Aug 2, 2011

Methods of forming insulation layer patterns and methods of manufacturing semiconductor devices including insulation layer patterns

SAMSUNG ELECTRONICS CO LTD0 citations52

LEE KYOUNG-WOO

4 patents

LG ELECTRONICS INC

2 patents

SAMSUNG ELECRTONICS CO LTD

1 patent

KIM JUN JUNG

1 patent

PARK YOUNG HWAN

1 patent

Showing the top 50 of 61 patents by PatentIndex Score.