P

Inventor

VAN DER STRATEN OSCAR

US152 patents
⚠️ This page may combine multiple inventors who share the name “VAN DER STRATEN OSCAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

48 patents
US7528066B2May 5, 2009

Structure and method for metal integration

IBM50 citations96
US10580966B1Mar 3, 2020

Faceted sidewall magnetic tunnel junction structure

IBM20 citations94
US9741812B1Aug 22, 2017

Dual metal interconnect structure

IBM28 citations94
US9934977B1Apr 3, 2018

Salicide bottom contacts

IBM14 citations93
US9437714B1Sep 6, 2016

Selective gate contact fill metallization

IBM23 citations93
US10461148B1Oct 29, 2019

Multilayer buried metal-insultor-metal capacitor structures

IBM10 citations84
US10411109B2Sep 10, 2019

Bipolar junction transistor (BJT) for liquid flow biosensing applications without a reference electrode and large sensing area

IBM6 citations84
US10269698B1Apr 23, 2019

Binary metallization structure for nanoscale dual damascene interconnects

IBM7 citations84
US10170419B2Jan 1, 2019

Biconvex low resistance metal wire

IBM6 citations84
US10090287B1Oct 2, 2018

Deep high capacity capacitor for bulk substrates

IBM8 citations84
US10056329B1Aug 21, 2018

Programmable buried antifuse

IBM5 citations84
US10049980B1Aug 14, 2018

Low resistance seed enhancement spacers for voidless interconnect structures

IBM7 citations84
US9935051B2Apr 3, 2018

Multi-level metallization interconnect structure

IBM12 citations84
US9735165B1Aug 15, 2017

Vertically stacked FinFET fuse

IBM9 citations84
US9722038B2Aug 1, 2017

Metal cap protection layer for gate and contact metallization

IBM7 citations84
US9613899B1Apr 4, 2017

Epitaxial semiconductor fuse for FinFET structure

IBM7 citations84
US7800228B2Sep 21, 2010

Reliable via contact interconnect structure

IBM12 citations84
US10074727B2Sep 11, 2018

Low resistivity wrap-around contacts

IBM15 citations83
US11758819B2Sep 12, 2023

Magneto-resistive random access memory with laterally-recessed free layer

IBM2 citations73
US11239414B2Feb 1, 2022

Physical unclonable function for MRAM structures

IBM2 citations73
US11183455B2Nov 23, 2021

Interconnects with enlarged contact area

IBM2 citations73
US11069854B2Jul 20, 2021

Laser anneal for MRAM encapsulation enhancement

IBM2 citations73
US10950493B1Mar 16, 2021

Interconnects having air gap spacers

IBM2 citations73
US10672611B2Jun 2, 2020

Hardmask stress, grain, and structure engineering for advanced memory applications

IBM3 citations73
US10546915B2Jan 28, 2020

Buried MIM capacitor structure with landing pads

IBM2 citations73
US10541202B2Jan 21, 2020

Programmable buried antifuse

IBM2 citations73
US10446746B1Oct 15, 2019

ReRAM structure formed by a single process

IBM3 citations73
US10388600B2Aug 20, 2019

Binary metallization structure for nanoscale dual damascene interconnects

IBM5 citations73
US10340355B2Jul 2, 2019

Method of forming a dual metal interconnect structure

IBM3 citations73
US10312097B2Jun 4, 2019

Salicide bottom contacts

IBM2 citations73
US10249501B2Apr 2, 2019

Single process for liner and metal fill

IBM2 citations73
US10211095B2Feb 19, 2019

High performance middle of line interconnects

IBM2 citations73
US10170360B2Jan 1, 2019

Reflow enhancement layer for metallization structures

IBM2 citations73
US10128188B2Nov 13, 2018

High aspect ratio contact metallization without seams

IBM2 citations73
US10109740B2Oct 23, 2018

Programmable bulk FinFET antifuses

IBM4 citations73
US10056391B2Aug 21, 2018

Vertically stacked FinFET fuse

IBM4 citations73
US10038050B2Jul 31, 2018

FinFET resistor and method to fabricate same

IBM3 citations73
US10008507B2Jun 26, 2018

Metal FinFET anti-fuse

IBM2 citations73
US10002789B2Jun 19, 2018

High performance middle of line interconnects

IBM2 citations73
US9947621B2Apr 17, 2018

Structure and method to reduce copper loss during metal cap formation

IBM4 citations73
US9922941B1Mar 20, 2018

Thin low defect relaxed silicon germanium layers on bulk silicon substrates

IBM3 citations73
US9876075B2Jan 23, 2018

Method of forming dielectric with air gaps for use in semiconductor devices

IBM3 citations73
US9859219B1Jan 2, 2018

Copper wiring structures with copper titanium encapsulation

IBM2 citations73
US9842770B1Dec 12, 2017

Reflow enhancement layer for metallization structures

IBM2 citations73
US9812522B2Nov 7, 2017

Metal-insulator-metal capacitor fabrication with unitary sputtering process

IBM4 citations73
US9793213B2Oct 17, 2017

Ion flow barrier structure for interconnect metallization

IBM2 citations73
US9564310B1Feb 7, 2017

Metal-insulator-metal capacitor fabrication with unitary sputtering process

IBM4 citations73
US10361277B2Jul 23, 2019

Low resistivity wrap-around contacts

IBM2 citations72

YANG CHIH-CHAO

1 patent

GLOBALFOUNDRIES INC

1 patent

Showing the top 50 of 152 patents by PatentIndex Score.