Inventor
LIN JYUN-YING
TW15 patents
⚠️ This page may combine multiple inventors who share the name “LIN JYUN-YING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
12 patentsUS10276651B2Apr 30, 2019
Low warpage high density trench capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD15 citations93
US9978829B2May 22, 2018
Low impedance high density deep trench capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD22 citations93
US9178080B2Nov 3, 2015
Deep trench structure for high density capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD49 citations93
US11063157B1Jul 13, 2021
Trench capacitor profile to decrease substrate warpage
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US11769792B2Sep 26, 2023
Trench capacitor profile to decrease substrate warpage
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US12272725B2Apr 8, 2025
Low warpage high density trench capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176387B2Dec 24, 2024
Trench capacitor profile to decrease substrate warpage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11688762B2Jun 27, 2023
Low warpage high density trench capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10693019B2Jun 23, 2020
Film scheme for a high density trench capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10868110B2Dec 15, 2020
Low warpage high density trench capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12199139B2Jan 14, 2025
Trench capacitor film scheme to reduce substrate warpage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12439582B2Oct 7, 2025
Deep trench capacitor and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48