Inventor

BAE BYOUNGJAE

KR12 patents

⚠️ This page may combine multiple inventors who share the name “BAE BYOUNGJAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

4 patents

US10347819B2Jul 9, 2019

Magnetic memory devices having conductive pillar structures including patterning residue components

SAMSUNG ELECTRONICS CO LTD2 citations72

US11683992B2Jun 20, 2023

Magnetic memory device

SAMSUNG ELECTRONICS CO LTD2 citations71

US12408350B2Sep 2, 2025

Semiconductor devices having uppermost interconnection lines protruding beyond top surface of lower insulating layer on cell region

SAMSUNG ELECTRONICS CO LTD0 citations44

US12336437B2Jun 17, 2025

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations44

PARK JONGCHUL

2 patents

US9634240B2Apr 25, 2017

Magnetic memory devices

PARK JONGCHUL2 citations71

US9515255B2Dec 6, 2016

Methods of manufacturing semiconductor devices using cavities to distribute conductive patterning residue

PARK JONGCHUL2 citations61

BAE BYOUNGJAE

2 patents

US9502643B2Nov 22, 2016

Semiconductor device, magnetic memory device, and method of fabricating the same

BAE BYOUNGJAE2 citations54

US8810003B2Aug 19, 2014

Semiconductor device and method of fabricating the same

BAE BYOUNGJAE0 citations46

JOO HEUNG JIN

1 patent

US8598010B2Dec 3, 2013

Methods of forming variable-resistance memory devices and devices formed thereby

JOO HEUNG JIN10 citations80

IM DONG-HYUN

1 patent

US8980679B2Mar 17, 2015

Apparatus and methods for forming phase change layer and method of manufacturing phase change memory device

IM DONG-HYUN6 citations67

KANG SHIN JAE

1 patent

US9893272B2Feb 13, 2018

Magnetic memory device comprising oxide patterns

KANG SHIN JAE2 citations64

SUH KISEOK

1 patent

US10164170B2Dec 25, 2018

Semiconductor device

SUH KISEOK1 citations46