P

Inventor

IYECHIKA YASUSHI

JP35 patents
⚠️ This page may combine multiple inventors who share the name “IYECHIKA YASUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO CHEMICAL CO

21 patents
US5317169AMay 31, 1994

Organic electroluminescence device

SUMITOMO CHEMICAL CO318 citations99
US5587014ADec 24, 1996

Method for manufacturing group III-V compound semiconductor crystals

SUMITOMO CHEMICAL CO118 citations98
US6503610B2Jan 7, 2003

Group III-V compound semiconductor and method of producing the same

SUMITOMO CHEMICAL CO105 citations97
US5726457AMar 10, 1998

Organic electroluminescence device

SUMITOMO CHEMICAL CO92 citations96
US6346720B1Feb 12, 2002

Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element

SUMITOMO CHEMICAL CO29 citations92
US6225195B1May 1, 2001

Method for manufacturing group III-V compound semiconductor

SUMITOMO CHEMICAL CO22 citations92
US6023077AFeb 8, 2000

Group III-V compound semiconductor and light-emitting device

SUMITOMO CHEMICAL CO27 citations92
US5708301AJan 13, 1998

Electrode material and electrode for III-V group compound semiconductor

SUMITOMO CHEMICAL CO17 citations92
US7098484B2Aug 29, 2006

Epitaxial substrate for compound semiconductor light-emitting device, method for producing the same and light-emitting device

SUMITOMO CHEMICAL CO13 citations83
US6756246B2Jun 29, 2004

Method for fabricating III-V group compound semiconductor

SUMITOMO CHEMICAL CO14 citations82
US6875273B2Apr 5, 2005

Method and system for manufacturing III-V Group compound semiconductor and III-V Group compound semiconductor

SUMITOMO CHEMICAL CO16 citations81
US6617235B2Sep 9, 2003

Method of manufacturing Group III-V compound semiconductor

SUMITOMO CHEMICAL CO11 citations74
US6472298B2Oct 29, 2002

Layered group III-V compound semiconductor, method of manufacturing the same and light emitting element

SUMITOMO CHEMICAL CO11 citations74
US7459326B2Dec 2, 2008

Method for producing and epitaxial substrate for compound semiconductor light-emitting device

SUMITOMO CHEMICAL CO8 citations73
US6716724B1Apr 6, 2004

Method of producing 3-5 group compound semiconductor and semiconductor element

SUMITOMO CHEMICAL CO10 citations73
US6946308B2Sep 20, 2005

Method of manufacturing III-V group compound semiconductor

SUMITOMO CHEMICAL CO7 citations72
US5980632ANov 9, 1999

Member for use in production device for semiconductors

SUMITOMO CHEMICAL CO12 citations71
US6388323B1May 14, 2002

Electrode material and electrode for III-V group compound semiconductor

SUMITOMO CHEMICAL CO3 citations63
US6844574B1Jan 18, 2005

III-V compound semiconductor

SUMITOMO CHEMICAL CO6 citations62
US6104044AAug 15, 2000

Semiconductor compound electrode material containing calcium and a noble metal

SUMITOMO CHEMICAL CO6 citations62
US6100105AAug 8, 2000

Fabrication of InGaAlN based compound semiconductor device

SUMITOMO CHEMICAL CO3 citations60

NUFLARE TECHNOLOGY INC

11 patents

SUMITOMO CHEMICAL COMPANY LIMT

2 patents

OHORI TATSUYA

1 patent