Inventor
MANLEY MARTIN H
US21 patents
⚠️ This page may combine multiple inventors who share the name “MANLEY MARTIN H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NAT SEMICONDUCTOR CORP
6 patentsUS5284784AFeb 8, 1994
Buried bit-line source-side injection flash memory cell
NAT SEMICONDUCTOR CORP136 citations98
US5063172ANov 5, 1991
Manufacture of a split-gate EPROM cell using polysilicon spacers
NAT SEMICONDUCTOR CORP71 citations96
US5108939AApr 28, 1992
Method of making a non-volatile memory cell utilizing polycrystalline silicon spacer tunnel region
NAT SEMICONDUCTOR CORP68 citations95
US5404037AApr 4, 1995
EEPROM cell with the drain diffusion region self-aligned to the tunnel oxide region
NAT SEMICONDUCTOR CORP52 citations92
US5115288AMay 19, 1992
Split-gate EPROM cell using polysilicon spacers
NAT SEMICONDUCTOR CORP51 citations92
US5517453AMay 14, 1996
Memory with multiple erase modes
NAT SEMICONDUCTOR CORP15 citations73
POWER INTEGRATIONS INC
5 patentsUS7595523B2Sep 29, 2009
Gate pullback at ends of high-voltage vertical transistor structure
POWER INTEGRATIONS INC49 citations96
US8022456B2Sep 20, 2011
Checkerboarded high-voltage vertical transistor layout
POWER INTEGRATIONS INC24 citations92
US7859037B2Dec 28, 2010
Checkerboarded high-voltage vertical transistor layout
POWER INTEGRATIONS INC25 citations92
US9112017B2Aug 18, 2015
Integrated transistor and anti-fuse as programming element for a high-voltage integrated circuit
POWER INTEGRATIONS INC5 citations84
US8816433B2Aug 26, 2014
Checkerboarded high-voltage vertical transistor layout
POWER INTEGRATIONS INC2 citations63
PARTHASARATHY VIJAY
4 patentsUS8410551B2Apr 2, 2013
Checkerboarded high-voltage vertical transistor layout
PARTHASARATHY VIJAY8 citations84
US8653583B2Feb 18, 2014
Sensing FET integrated with a high-voltage transistor
PARTHASARATHY VIJAY5 citations73
US8222691B2Jul 17, 2012
Gate pullback at ends of high-voltage vertical transistor structure
PARTHASARATHY VIJAY1 citations63
US9601613B2Mar 21, 2017
Gate pullback at ends of high-voltage vertical transistor structure
PARTHASARATHY VIJAY0 citations52