Inventor
RAOUX SIMONE
US26 patents
⚠️ This page may combine multiple inventors who share the name “RAOUX SIMONE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
17 patentsUS7494841B2Feb 24, 2009
Solution-based deposition process for metal chalcogenides
IBM78 citations98
US6936840B2Aug 30, 2005
Phase-change memory cell and method of fabricating the phase-change memory cell
IBM290 citations97
US7221579B2May 22, 2007
Method and structure for high performance phase change memory
IBM67 citations96
US7501648B2Mar 10, 2009
Phase change materials and associated memory devices
IBM23 citations92
US7488967B2Feb 10, 2009
Structure for confining the switching current in phase memory (PCM) cells
IBM40 citations92
US7009694B2Mar 7, 2006
Indirect switching and sensing of phase change memory cells
IBM40 citations92
US7932507B2Apr 26, 2011
Current constricting phase change memory element structure
IBM14 citations84
US7745807B2Jun 29, 2010
Current constricting phase change memory element structure
IBM11 citations84
US7491573B1Feb 17, 2009
Phase change materials for applications that require fast switching and high endurance
IBM12 citations84
US9257643B2Feb 9, 2016
Phase change memory cell with improved phase change material
IBM4 citations73
US8378328B2Feb 19, 2013
Phase change memory random access device using single-element phase change material
IBM5 citations73
US7875873B2Jan 25, 2011
Phase change materials and associated memory devices
IBM6 citations72
US7459266B2Dec 2, 2008
Phase-change memory cell and method of fabricating the phase-change memory cell
IBM7 citations71
US8029716B2Oct 4, 2011
Amorphous nitride release layers for imprint lithography, and method of use
IBM6 citations63
US7833825B2Nov 16, 2010
Solution-based deposition process for metal chalcogenides
IBM3 citations63
US9653683B2May 16, 2017
Phase change memory cell with improved phase change material
IBM1 citations52
US7910910B2Mar 22, 2011
Phase-change memory cell and method of fabricating the phase-change memory cell
IBM3 citations51
CHENG HUAI-YU
3 patentsUS8946666B2Feb 3, 2015
Ge-Rich GST-212 phase change memory materials
CHENG HUAI-YU16 citations83
US8426242B2Apr 23, 2013
Composite target sputtering for forming doped phase change materials
CHENG HUAI-YU11 citations83
US8178387B2May 15, 2012
Methods for reducing recrystallization time for a phase change material
CHENG HUAI-YU17 citations83