Inventor

NA MYUNG-HEE

US26 patents

⚠️ This page may combine multiple inventors who share the name “NA MYUNG-HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NA MYUNG-HEE

IBM

Metal fill optimization for self-aligned double patterning

Strained finFET with an electrically isolated channel

Method of providing threshold voltage adjustment through gate dielectric stack modification

Method and structures for measuring gate tunneling leakage parameters of field effect transistors

Channel orientation of CMOS gate-all-around field-effect transistor devices for enhanced carrier mobility

Strained finFET with an electrically isolated channel

FinFET formation with late fin reveal

Structure and method to form phase change memory cell with self- align top electrode contact

Silicon-germanium fins and silicon fins on a bulk substrate

4T static random access memory bitcell retention

Ultra dense and stable 4T SRAM cell design having NFETs and PFETs

Contact-first field-effect transistors

Structure and method to form bi-layer composite phase-change-memory cell

Standard cell architecture with at least one gate contact over an active area

Reliable gate contacts over active areas

Self-aligned high density and size adjustable phase change memory

Standard cell architecture with at least one gate contact over an active area

Determining current of a first FET of body connected FETs

Rotated field effect transistors and method of manufacture

Rotated field effect transistors and method of manufacture

Metal fill optimization for self-aligned double patterning

Efficient methodology for the accurate generation of customized compact model parameters from electrical test data

GREENE BRIAN J

Threshold voltage adjustment through gate dielectric stack modification

INT BUSNIESS MACHINES CORPORATION

Reliable gate contacts over active areas

NA MYUNG-HEE

Semiconductor device including body connected FETs

GLOBALFOUNDRIES INC

Field effect transistor having delay element with back gate