Inventor

CURATOLA GILBERTO

AT52 patents

⚠️ This page may combine multiple inventors who share the name “CURATOLA GILBERTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CURATOLA GILBERTO

INFINEON TECHNOLOGIES AUSTRIA AG

Method of forming compound semiconductor body

Avalanche-rugged quasi-vertical HEMT

Enhancement mode Group III nitride-based transistor device

High electron mobility transistor with dual thickness barrier layer

High electron mobility transistor with graded back-barrier region

High electron mobility transistor with deep charge carrier gas contact structure

Semiconductor device

Gate stack for normally-off compound semiconductor transistor

Semiconductor component with transistor

Breakdown resistant HEMT substrate and device

Enhancement mode transistor device

High Electron Mobility Transistor with dual thickness barrier layer

High electron mobility transistor with carrier injection mitigation gate structure

Compound semiconductor device having at least one buried semiconductor material region

Patterned back-barrier for III-nitride semiconductor devices

Method of manufacturing a stress-controlled HEMT

Compound semiconductor transistor with gate overvoltage protection

Sloped field plate and contact structures for semiconductor devices and methods of manufacturing thereof

Semiconductor device and method

Semiconductor device and method

CURATOLA GILBERTO

Normally-off compound semiconductor tunnel transistor

Compound semiconductor device with buried field plate

Charge-pump circuit

Normally-off high electron mobility transistors

HEMT with integrated low forward bias diode

Self-aligned impact-ionization field effect transistor

Method of manufacturing a tunnel transistor and IC comprising the same

Tunnel field effect transistor

III-V semiconductor devices with buried contacts

Field-effect magnetic sensor

INFINEON TECHNOLOGIES AUSTRIA

Switch circuit and semiconductor device

High electron mobility transistor with RC network integrated into gate structure

Semiconductor device and method

Method of manufacturing a semiconductor device having a buried field plate

RF power HEMT grown on a silicon or SiC substrate with a front-side plug connection

Self-doped ohmic contacts for compound semiconductor devices

Compound semiconductor device

HEMT with compensation structure

Normally-off compound semiconductor tunnel transistor with a plurality of charge carrier gases

NXP BV

Tunnel field effect transistor

Transistor device and method of manufacturing such a transistor device

MERZ MATTHIAS

Apparatus and method for molecule detection using nanopores

Electrochemical potentiometric sensing without reference electrode

VELLIANITIS GEORGIOS

Integrated circuit

Schottky diode and method of manufacture

HOOFMAN ROMANO

Food package with integrated RFID-tag and sensor

HÄBERLEN OLIVER

Compound semiconductor transistor with self aligned gate

INFINEON TECHNOLOGIES AMERICAS CORP

Interdigit device on leadframe for evenly distributed current flow

SIEMIENIEC RALF

Stress-controlled HEMT

VIELEMEYER MARTIN

Gate overvoltage protection for compound semiconductor transistors