Inventor
GAO JUWEN
US33 patents
⚠️ This page may combine multiple inventors who share the name “GAO JUWEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NOVELLUS SYSTEMS INC
14 patentsUS9653353B2May 16, 2017
Tungsten feature fill
NOVELLUS SYSTEMS INC50 citations98
US9240347B2Jan 19, 2016
Tungsten feature fill
NOVELLUS SYSTEMS INC72 citations98
US7754604B2Jul 13, 2010
Reducing silicon attack and improving resistivity of tungsten nitride film
NOVELLUS SYSTEMS INC56 citations98
US7141494B2Nov 28, 2006
Method for reducing tungsten film roughness and improving step coverage
NOVELLUS SYSTEMS INC147 citations98
US7005372B2Feb 28, 2006
Deposition of tungsten nitride
NOVELLUS SYSTEMS INC187 citations98
US7691749B2Apr 6, 2010
Deposition of tungsten nitride
NOVELLUS SYSTEMS INC97 citations97
US7655567B1Feb 2, 2010
Methods for improving uniformity and resistivity of thin tungsten films
NOVELLUS SYSTEMS INC91 citations97
US7262125B2Aug 28, 2007
Method of forming low-resistivity tungsten interconnects
NOVELLUS SYSTEMS INC91 citations97
US10256142B2Apr 9, 2019
Tungsten feature fill with nucleation inhibition
NOVELLUS SYSTEMS INC25 citations94
US10103058B2Oct 16, 2018
Tungsten feature fill
NOVELLUS SYSTEMS INC23 citations94
US9034760B2May 19, 2015
Methods of forming tensile tungsten films and compressive tungsten films
NOVELLUS SYSTEMS INC25 citations92
US11075115B2Jul 27, 2021
Tungsten feature fill
NOVELLUS SYSTEMS INC11 citations86
US11410883B2Aug 9, 2022
Tungsten feature fill with nucleation inhibition
NOVELLUS SYSTEMS INC5 citations84
US12444651B2Oct 14, 2025
Tungsten feature fill with nucleation inhibition
NOVELLUS SYSTEMS INC0 citations62
LAM RES CORP
13 patentsUS9362163B2Jun 7, 2016
Methods and apparatuses for atomic layer cleaning of contacts and vias
LAM RES CORP109 citations96
US9997405B2Jun 12, 2018
Feature fill with nucleation inhibition
LAM RES CORP22 citations94
US9595470B2Mar 14, 2017
Methods of preparing tungsten and tungsten nitride thin films using tungsten chloride precursor
LAM RES CORP27 citations94
US11348795B2May 31, 2022
Metal fill process for three-dimensional vertical NAND wordline
LAM RES CORP7 citations86
US10580695B2Mar 3, 2020
Feature fill with nucleation inhibition
LAM RES CORP13 citations86
US9969622B2May 15, 2018
Ternary tungsten boride nitride films and methods for forming same
LAM RES CORP12 citations84
US9953984B2Apr 24, 2018
Tungsten for wordline applications
LAM RES CORP12 citations84
US11901227B2Feb 13, 2024
Feature fill with nucleation inhibition
LAM RES CORP3 citations75
US11670516B2Jun 6, 2023
Metal-containing passivation for high aspect ratio etch
LAM RES CORP3 citations72
US12014928B2Jun 18, 2024
Multi-layer feature fill
LAM RES CORP2 citations71
US10529722B2Jan 7, 2020
Tungsten for wordline applications
LAM RES CORP1 citations62
US11972952B2Apr 30, 2024
Atomic layer deposition on 3D NAND structures
LAM RES CORP1 citations59
US12060639B2Aug 13, 2024
Rapid flush purging during atomic layer deposition
LAM RES CORP0 citations47
GAO JUWEN
3 patentsUS8101521B1Jan 24, 2012
Methods for improving uniformity and resistivity of thin tungsten films
GAO JUWEN61 citations97
US8207062B2Jun 26, 2012
Method for improving adhesion of low resistivity tungsten/tungsten nitride layers
GAO JUWEN46 citations93
US8778797B2Jul 15, 2014
Systems and methods for selective tungsten deposition in vias
GAO JUWEN11 citations83