Inventor
KWAK PAN-SUK
KR30 patents
⚠️ This page may combine multiple inventors who share the name “KWAK PAN-SUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
26 patentsUS7570517B2Aug 4, 2009
Flash memory device adapted to prevent read failures due to dummy strings
SAMSUNG ELECTRONICS CO LTD24 citations92
US7499327B2Mar 3, 2009
NAND flash memory device having page buffer adapted to discharge bit line voltage during erase operation
SAMSUNG ELECTRONICS CO LTD20 citations92
US8026044B2Sep 27, 2011
Method of forming fine patterns of semiconductor device
SAMSUNG ELECTRONICS CO LTD22 citations91
US8040726B2Oct 18, 2011
Flash memory device and layout method of the flash memory device
SAMSUNG ELECTRONICS CO LTD9 citations84
US7892982B2Feb 22, 2011
Method for forming fine patterns of a semiconductor device using a double patterning process
SAMSUNG ELECTRONICS CO LTD19 citations84
US10446575B2Oct 15, 2019
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD13 citations83
US8797780B2Aug 5, 2014
Memory device having sub-bit lines and memory system
SAMSUNG ELECTRONICS CO LTD10 citations83
US10373972B2Aug 6, 2019
Vertical memory devices and methods of manufacturing vertical memory devices
SAMSUNG ELECTRONICS CO LTD7 citations82
US10559577B2Feb 11, 2020
Non-volatile memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations81
US10026747B2Jul 17, 2018
Non-volatile memory device with first gate structure in memory cell region and second gate structure in peripheral circuit region and non-volatile memory system including the same
SAMSUNG ELECTRONICS CO LTD13 citations78
US6288953B1Sep 11, 2001
Semiconductor memory device having sense amplifier control circuit responding to an address transition detection circuit
SAMSUNG ELECTRONICS CO LTD7 citations74
US7804716B2Sep 28, 2010
Flash memory device having improved bit-line layout and layout method for the flash memory device
SAMSUNG ELECTRONICS CO LTD7 citations73
US7876591B2Jan 25, 2011
Semiconductor memory device and method of forming a layout of the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7463543B2Dec 9, 2008
Lock-out device and semiconductor integrated circuit device including the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7439792B2Oct 21, 2008
High voltage generation circuit and semiconductor device having the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7193878B2Mar 20, 2007
Semiconductor memory device layout including increased length connection lines
SAMSUNG ELECTRONICS CO LTD3 citations63
US12543321B2Feb 3, 2026
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11950425B2Apr 2, 2024
Semiconductor memory device with mold structure
SAMSUNG ELECTRONICS CO LTD0 citations62
US7787301B2Aug 31, 2010
Flash memory device using double patterning technology and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US11665907B2May 30, 2023
Non-volatile memory
SAMSUNG ELECTRONICS CO LTD0 citations61
US11296066B2Apr 5, 2022
Non-volatile memory
SAMSUNG ELECTRONICS CO LTD1 citations61
US11075216B2Jul 27, 2021
Non-volatile memory
SAMSUNG ELECTRONICS CO LTD0 citations61
US10964710B2Mar 30, 2021
Non-volatile memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US7940566B2May 10, 2011
Flash memory device adapted to prevent read failures due to dummy strings
SAMSUNG ELECTRONICS CO LTD1 citations52
US12308367B2May 20, 2025
Nonvolatile memory device with openings in the substrate and nonvolatile memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12219774B2Feb 4, 2025
Nonvolatile memory chip and semiconductor package including the same
SAMSUNG ELECTRONICS CO LTD0 citations51