Inventor

GLASS GLENN

US21 patents

⚠️ This page may combine multiple inventors who share the name “GLASS GLENN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLASS GLENN

INTEL CORP

Formation of strain-inducing films

Gate-all-around integrated circuit structures having vertically discrete source or drain structures

High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOS

Methods of forming self aligned spacers for nanowire device structures

Methods of forming doped source/drain contacts and structures formed thereby

Methods of forming dislocation enhanced strain in NMOS structures

Integrated circuit structures having germanium-based channels

Gate-all-around integrated circuit structures having nanowires with tight vertical spacing

Integrated circuit structures having germanium-based channels

Gate-all-around integrated circuit structures having nanowires with tight vertical spacing

Germanium-rich nanowire transistor with relaxed buffer layer

Integrated circuit structures having germanium-based channels

Methods of forming doped source/drain contacts and structures formed thereby

Methods of forming dislocation enhanced strain in NMOS and PMOS structures

Methods of forming dislocation enhanced strain in NMOS structures

Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers

Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers

Systems, methods and devices for isolation for subfin leakage

Co-integration of high voltage (HV) and low voltage (LV) transistor structures, using channel height and spacing modulation

DAEDALUS PRIME LLC

Methods of forming dislocation enhanced strain in NMOS and PMOS structures

Methods of forming dislocation enhanced strain in NMOS and PMOS structures