Inventor
YEH CHUN-YING
TW25 patents
⚠️ This page may combine multiple inventors who share the name “YEH CHUN-YING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUPER GROUP SEMICONDUCTOR CO LTD
10 patentsUS8872266B1Oct 28, 2014
Trench power MOSFET structure and fabrication method thereof
SUPER GROUP SEMICONDUCTOR CO LTD10 citations82
US9722035B2Aug 1, 2017
Method for manufacturing termination structure of semiconductor device
SUPER GROUP SEMICONDUCTOR CO LTD2 citations71
US10497782B2Dec 3, 2019
Trench power semiconductor component and method of manufacturing the same
SUPER GROUP SEMICONDUCTOR CO LTD2 citations69
US10680076B2Jun 9, 2020
Trench power semiconductor and method of making the same
SUPER GROUP SEMICONDUCTOR CO LTD0 citations50
US10516027B2Dec 24, 2019
Trench power semiconductor and method of making the same
SUPER GROUP SEMICONDUCTOR CO LTD0 citations50
US9490134B2Nov 8, 2016
Termination structure of semiconductor device and method for manufacturing the same
SUPER GROUP SEMICONDUCTOR CO LTD0 citations50
US9035378B2May 19, 2015
Trench power MOSFET structure fabrication method
SUPER GROUP SEMICONDUCTOR CO LTD1 citations50
US8981485B2Mar 17, 2015
Power transistor having a top-side drain and forming method thereof
SUPER GROUP SEMICONDUCTOR CO LTD0 citations50
US9755028B2Sep 5, 2017
Semiconductor device and method for manufacturing the same
SUPER GROUP SEMICONDUCTOR CO LTD0 citations39
US10559674B2Feb 11, 2020
Manufacturing method of a trench power semiconductor device
SUPER GROUP SEMICONDUCTOR CO LTD0 citations38
GREAT POWER SEMICONDUCTOR CORP
4 patentsUS7994001B1Aug 9, 2011
Trenched power semiconductor structure with schottky diode and fabrication method thereof
GREAT POWER SEMICONDUCTOR CORP12 citations82
US9214531B2Dec 15, 2015
Trenched power MOSFET with enhanced breakdown voltage and fabrication method thereof
GREAT POWER SEMICONDUCTOR CORP0 citations50
US8975691B2Mar 10, 2015
Trenched power MOSFET with enhanced breakdown voltage and fabrication method thereof
GREAT POWER SEMICONDUCTOR CORP0 citations50
US8354315B2Jan 15, 2013
Fabrication method of a power semicondutor structure with schottky diode
GREAT POWER SEMICONDUCTOR CORP0 citations50
EPISIL TECHNOLOGIES INC
3 patentsUS7514754B2Apr 7, 2009
Complementary metal-oxide-semiconductor transistor for avoiding a latch-up problem
EPISIL TECHNOLOGIES INC20 citations90
US7411271B1Aug 12, 2008
Complementary metal-oxide-semiconductor field effect transistor
EPISIL TECHNOLOGIES INC20 citations90
US7538396B2May 26, 2009
Semiconductor device and complementary metal-oxide-semiconductor field effect transistor
EPISIL TECHNOLOGIES INC1 citations49
YEH CHUN YING
3 patentsUS8283230B2Oct 9, 2012
Fabrication method of self-aligned trenched power semiconductor structure
YEH CHUN YING2 citations60
US8088662B2Jan 3, 2012
Fabrication method of trenched metal-oxide-semiconductor device
YEH CHUN YING3 citations60
US8846469B2Sep 30, 2014
Fabrication method of trenched power semiconductor device with source trench
YEH CHUN YING0 citations39