Inventor
SOUSA RICARDO
FR21 patents
⚠️ This page may combine multiple inventors who share the name “SOUSA RICARDO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
13 patentsUS7957181B2Jun 7, 2011
Magnetic tunnel junction magnetic memory
COMMISSARIAT ENERGIE ATOMIQUE10 citations84
US7898833B2Mar 1, 2011
Magnetic element with thermally-assisted writing
COMMISSARIAT ENERGIE ATOMIQUE12 citations80
US7480175B2Jan 20, 2009
Magnetic tunnel junction device and writing/reading for said device
COMMISSARIAT ENERGIE ATOMIQUE10 citations79
US10818329B2Oct 27, 2020
Magnetic tunnel junction with perpendicular shape anisotropy and minimised variation of temperature memory point and logic element including the magnetic tunnel junction, method of manufacturing the magnetic tunnel junction
COMMISSARIAT ENERGIE ATOMIQUE2 citations71
US10978234B2Apr 13, 2021
Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stack
COMMISSARIAT ENERGIE ATOMIQUE5 citations67
US10658574B2May 19, 2020
Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer
COMMISSARIAT ENERGIE ATOMIQUE2 citations66
US8958240B2Feb 17, 2015
Magnetic device with thermally-assisted switching
COMMISSARIAT ENERGIE ATOMIQUE2 citations62
US12292486B2May 6, 2025
Method for measuring an external magnetic field by at least one magnetic memory point
COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US10930841B2Feb 23, 2021
Magnetic tunnel junction with perpendicular shape anisotropy and minimised variability, memory point and logic element including the magnetic tunnel junction, method for manufacturing the magnetic tunnel junction
COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US12100437B2Sep 24, 2024
Magnetic tunnel junction comprising an inhomogeneous granular free layer and associated spintronic devices
COMMISSARIAT ENERGIE ATOMIQUE0 citations46
US12046268B2Jul 23, 2024
Cryogenic magnetic device more particularly for logic component or memory
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US7626221B2Dec 1, 2009
Magnetoresistive random access memory with high current density
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US9455012B2Sep 27, 2016
Magnetic device with spin polarisation
COMMISSARIAT ENERGIE ATOMIQUE0 citations35
DIENY BERNARD
2 patentsCENTRE NAT RECH SCIENT
2 patentsCROCUS TECHNOLOGY SA
2 patentsUS9396782B2Jul 19, 2016
Method for writing to a random access memory (MRAM) cell with improved MRAM cell lifespan
CROCUS TECHNOLOGY SA2 citations56
US8971102B2Mar 3, 2015
MRAM cell and method for writing to the MRAM cell using a thermally assisted write operation with a reduced field current
CROCUS TECHNOLOGY SA0 citations41