Inventor
CHUDZIK MICHAEL
US15 patents
⚠️ This page may combine multiple inventors who share the name “CHUDZIK MICHAEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
11 patentsUS9865735B2Jan 9, 2018
Horizontal gate all around and FinFET device isolation
APPLIED MATERIALS INC4 citations83
US9460920B1Oct 4, 2016
Horizontal gate all around device isolation
APPLIED MATERIALS INC15 citations83
US9748354B2Aug 29, 2017
Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof
APPLIED MATERIALS INC5 citations73
US11145761B2Oct 12, 2021
Horizontal gate all around and FinFET device isolation
APPLIED MATERIALS INC2 citations72
US10573719B2Feb 25, 2020
Horizontal gate all around device isolation
APPLIED MATERIALS INC2 citations72
US10490666B2Nov 26, 2019
Horizontal gate all around and FinFET device isolation
APPLIED MATERIALS INC1 citations72
US11410873B2Aug 9, 2022
Deep trench integration processes and devices
APPLIED MATERIALS INC0 citations61
US11837683B2Dec 5, 2023
Indium-gallium-nitride light emitting diodes with increased red-light quantum efficiency
APPLIED MATERIALS INC0 citations58
US11322649B2May 3, 2022
Three color light sources integrated on a single wafer
APPLIED MATERIALS INC0 citations51
US12336336B2Jun 17, 2025
Indium-gallium-nitride light emitting diodes with light reflecting mirrors
APPLIED MATERIALS INC0 citations48
US11536708B2Dec 27, 2022
Methods to fabricate dual pore devices
APPLIED MATERIALS INC0 citations46
IBM
4 patentsUS6451662B1Sep 17, 2002
Method of forming low-leakage on-chip capacitor
IBM47 citations92
US7091118B1Aug 15, 2006
Replacement metal gate transistor with metal-rich silicon layer and method for making the same
IBM49 citations91
US7682917B2Mar 23, 2010
Disposable metallic or semiconductor gate spacer
IBM11 citations84
US7863124B2Jan 4, 2011
Residue free patterned layer formation method applicable to CMOS structures
IBM2 citations63