Inventor
CHO YONGSUNG
KR34 patents
⚠️ This page may combine multiple inventors who share the name “CHO YONGSUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
32 patentsUS9064545B2Jun 23, 2015
Nonvolatile memory device having adjustable program pulse width
SAMSUNG ELECTRONICS CO LTD7 citations83
US12198782B2Jan 14, 2025
Memory device, operation method of memory device, and page buffer included in memory device
SAMSUNG ELECTRONICS CO LTD2 citations73
US11568903B2Jan 31, 2023
Page buffer circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US12057173B2Aug 6, 2024
Page buffer circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10529431B2Jan 7, 2020
Nonvolatile memory device for performing a partial read operation and a method of reading the same
SAMSUNG ELECTRONICS CO LTD4 citations72
US10269438B2Apr 23, 2019
Nonvolatile memory device for performing a partial read operation and a method of reading the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US9672924B2Jun 6, 2017
Nonvolatile memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD4 citations72
US11646064B2May 9, 2023
Page buffer circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US12347499B2Jul 1, 2025
Page buffer circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11942166B2Mar 26, 2024
Nonvolatile memory device, storage device including nonvolatile memory device, and operating method of nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11646087B2May 9, 2023
Nonvolatile memory device, storage device including nonvolatile memory device, and operating method of nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12073909B2Aug 27, 2024
Page buffer circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12347500B2Jul 1, 2025
Memory device including vertical channel structure
SAMSUNG ELECTRONICS CO LTD0 citations60
US11842790B2Dec 12, 2023
Page buffer circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12555639B2Feb 17, 2026
Memory device including page buffer circuit
SAMSUNG ELECTRONICS CO LTD0 citations59
US12002518B2Jun 4, 2024
Memory device performing temperature compensation and operating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations58
US12475954B2Nov 18, 2025
Memory device including page buffer circuit and SSD including the memory device, and method of using the same
SAMSUNG ELECTRONICS CO LTD0 citations56
US11437088B2Sep 6, 2022
Memory device including row decoders
SAMSUNG ELECTRONICS CO LTD0 citations56
US12597469B2Apr 7, 2026
Nonvolatile memory device, storage device including the same, and method of testing nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations54
US12586650B2Mar 24, 2026
Page buffer circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12512166B2Dec 30, 2025
Flash memory for adjusting trip voltage using voltage regulator and sampling switch circuit and sensing method thereof
SAMSUNG ELECTRONICS CO LTD0 citations51
US11626166B2Apr 11, 2023
Memory device for performing temperature compensation and operating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations51
US11011228B2May 18, 2021
Memory device having an increased sensing margin
SAMSUNG ELECTRONICS CO LTD0 citations51
US12211559B2Jan 28, 2025
Page buffer circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12073915B2Aug 27, 2024
Memory device, operation method of memory device, and page buffer included in memory device
SAMSUNG ELECTRONICS CO LTD0 citations50
US12040799B2Jul 16, 2024
Clock generator and electronic device including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12451192B2Oct 21, 2025
Non-volatile memory device with high voltage region and low voltage region
SAMSUNG ELECTRONICS CO LTD0 citations49
US11600336B2Mar 7, 2023
Page buffer circuits and nonvolatile memory devices including the same
SAMSUNG ELECTRONICS CO LTD0 citations48
US12572191B2Mar 10, 2026
Power management integrated circuit, electronic device having the same, and operating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations47
US12505868B2Dec 23, 2025
Memory device including page buffer circuit
SAMSUNG ELECTRONICS CO LTD0 citations47
US11974440B2Apr 30, 2024
Page buffer circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations45
US12217804B2Feb 4, 2025
Nonvolatile memory device including combined sensing node and cache read method thereof
SAMSUNG ELECTRONICS CO LTD0 citations43