Inventor
FENG CHUNG-YEN
TW4 patents
Patents
4 patentsUS11877433B2Jan 16, 2024
Storage node contact structure of a memory device
UNITED MICROELECTRONICS CORP0 citations61
US11670713B2Jun 6, 2023
LDMOS and fabricating method of the same
UNITED MICROELECTRONICS CORP0 citations57
US11616139B2Mar 28, 2023
LDMOS and fabricating method of the same
UNITED MICROELECTRONICS CORP0 citations57
US10756090B2Aug 25, 2020
Storage node contact structure of a memory device and manufacturing methods thereof
UNITED MICROELECTRONICS CORP0 citations51