Inventor
EN GAD EYAL
US17 patents
⚠️ This page may combine multiple inventors who share the name “EN GAD EYAL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
9 patentsUS11394403B1Jul 19, 2022
Error correction based on rate adaptive low density parity check (LDPC) codes with flexible column weights in the parity check matrices
MICRON TECHNOLOGY INC7 citations85
US12218681B2Feb 4, 2025
Bit mask for syndrome decoding operations
MICRON TECHNOLOGY INC1 citations63
US12328129B2Jun 10, 2025
Bypassing iterations in a bit flipping decoder using a least reliable bit energy function
MICRON TECHNOLOGY INC0 citations62
US12014071B2Jun 18, 2024
Separation of parity columns in bit-flip decoding of low-density parity-check codes with pipelining and column parallelism
MICRON TECHNOLOGY INC0 citations62
US11777522B1Oct 3, 2023
Bit flipping decoder with dynamic bit flipping criteria
MICRON TECHNOLOGY INC0 citations62
US12321613B2Jun 3, 2025
Bit flipping decoder with optimized maximum iterations for varied bit flipping thresholds
MICRON TECHNOLOGY INC0 citations52
US12437788B2Oct 7, 2025
Syndrome decoding system
MICRON TECHNOLOGY INC0 citations51
US12332743B2Jun 17, 2025
Efficient memory use to support soft information in bit flipping decoders
MICRON TECHNOLOGY INC0 citations51
US12164375B2Dec 10, 2024
Syndrome decoding system
MICRON TECHNOLOGY INC0 citations51
CALIFORNIA INST OF TECHN
8 patentsUS9086955B2Jul 21, 2015
Rank-modulation rewriting codes for flash memories
CALIFORNIA INST OF TECHN8 citations82
US9983808B2May 29, 2018
NAND flash reliability with rank modulation
CALIFORNIA INST OF TECHN2 citations72
US9666280B2May 30, 2017
Flash memories using minimum push up, multi-cell and multi-permutation schemes for data storage
CALIFORNIA INST OF TECHN0 citations51
US9230652B2Jan 5, 2016
Flash memories using minimum push up, multi-cell and multi-permutation schemes for data storage
CALIFORNIA INST OF TECHN1 citations51
US9946475B2Apr 17, 2018
Joint rewriting and error correction in write-once memories
CALIFORNIA INST OF TECHN1 citations50
US9916197B2Mar 13, 2018
Rank-modulation rewriting codes for flash memories
CALIFORNIA INST OF TECHN0 citations50
US10191803B2Jan 29, 2019
Rewriting flash memories by message passing
CALIFORNIA INST OF TECHN0 citations41
US10379945B2Aug 13, 2019
Asymmetric error correction and flash-memory rewriting using polar codes
CALIFORNIA INST OF TECHN0 citations40