Inventor
HAN JUNG
TW28 patents
⚠️ This page may combine multiple inventors who share the name “HAN JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV YALE
14 patentsUS11043792B2Jun 22, 2021
Method for GaN vertical microcavity surface emitting laser (VCSEL)
UNIV YALE7 citations84
US10896818B2Jan 19, 2021
Stacking fault-free semipolar and nonpolar GaN grown on foreign substrates by eliminating the nitrogen polar facets during the growth
UNIV YALE7 citations84
US10458038B2Oct 29, 2019
Conductivity based on selective etch for GaN devices and applications thereof
UNIV YALE13 citations84
US9583353B2Feb 28, 2017
Lateral electrochemical etching of III-nitride materials for microfabrication
UNIV YALE16 citations84
US7407872B2Aug 5, 2008
Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition
UNIV YALE18 citations84
US9978589B2May 22, 2018
Nitrogen-polar semipolar and gallium-polar semipolar GaN layers and devices on sapphire substrates
UNIV YALE9 citations83
US9978845B2May 22, 2018
Method of obtaining planar semipolar gallium nitride surfaces
UNIV YALE10 citations83
US11095096B2Aug 17, 2021
Method for a GaN vertical microcavity surface emitting laser (VCSEL)
UNIV YALE9 citations82
US11018231B2May 25, 2021
Method to make buried, highly conductive p-type III-nitride layers
UNIV YALE4 citations73
US10435812B2Oct 8, 2019
Heterogeneous material integration through guided lateral growth
UNIV YALE5 citations73
US10554017B2Feb 4, 2020
Method and device concerning III-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer
UNIV YALE2 citations71
US9711352B2Jul 18, 2017
Large-area, laterally-grown epitaxial semiconductor layers
UNIV YALE4 citations70
US12588433B2Mar 24, 2026
Porous III-nitrides and methods of using and making thereof
UNIV YALE0 citations48
US7258807B2Aug 21, 2007
Controlled growth of gallium nitride nanostructures
UNIV YALE1 citations48
UNITED MICROELECTRONICS CORP
6 patentsUS10141398B1Nov 27, 2018
High voltage MOS structure and its manufacturing method
UNITED MICROELECTRONICS CORP13 citations83
US12342599B2Jun 24, 2025
Manufacturing method of semiconductor device including gate oxide layer
UNITED MICROELECTRONICS CORP0 citations59
US12211915B2Jan 28, 2025
Semiconductor device including gate oxide layer
UNITED MICROELECTRONICS CORP0 citations59
US12057483B2Aug 6, 2024
Semiconductor device including gate oxide layer and manufacturing method thereof
UNITED MICROELECTRONICS CORP0 citations59
US11626500B2Apr 11, 2023
Semiconductor device including gate oxide layer and manufacturing method thereof
UNITED MICROELECTRONICS CORP0 citations59
US12464762B2Nov 4, 2025
EDMOS and fabricating method of the same
UNITED MICROELECTRONICS CORP0 citations50