Inventor
CHENG PO-HSIEN
TW17 patents
Patents
17 patentsUS11271083B2Mar 8, 2022
Semiconductor device, FinFET device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations85
US9773662B1Sep 26, 2017
Method for fabricating a fine structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11114564B2Sep 7, 2021
Ferroelectric MFM inductor and related circuits
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12512408B2Dec 30, 2025
Semiconductor devices including backside power via and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324185B2Jun 3, 2025
Semiconductor device, FinFET device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12110587B2Oct 8, 2024
Deposition apparatus and method with EM radiation
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11984485B2May 14, 2024
Semiconductor device, FinFET device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12439624B2Oct 7, 2025
Method of manufacturing semiconductor devices including forming an air gap based on removing a recessed sacrificial layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12191144B2Jan 7, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12033850B2Jul 9, 2024
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11508572B2Nov 22, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11441221B2Sep 13, 2022
Method of performing atomic layer deposition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12349419B2Jul 1, 2025
Ferroelectric MFM inductor and related circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11728426B2Aug 15, 2023
Ferroelectric MFM inductor and related circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12374616B2Jul 29, 2025
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12426348B2Sep 23, 2025
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10269982B2Apr 23, 2019
Metallic channel device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51