Inventor
SOMERVELL MARK H
US33 patents
⚠️ This page may combine multiple inventors who share the name “SOMERVELL MARK H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
21 patentsUS9613801B2Apr 4, 2017
Integration of absorption based heating bake methods into a photolithography track system
TOKYO ELECTRON LTD464 citations98
US9349604B2May 24, 2016
Use of topography to direct assembly of block copolymers in grapho-epitaxial applications
TOKYO ELECTRON LTD15 citations92
US9418860B2Aug 16, 2016
Use of topography to direct assembly of block copolymers in grapho-epitaxial applications
TOKYO ELECTRON LTD12 citations91
US9746774B2Aug 29, 2017
Mitigation of EUV shot noise replicating into acid shot noise in photo-sensitized chemically-amplified resist (PS-CAR)
TOKYO ELECTRON LTD10 citations84
US9412611B2Aug 9, 2016
Use of grapho-epitaxial directed self-assembly to precisely cut lines
TOKYO ELECTRON LTD10 citations84
US8980538B2Mar 17, 2015
Chemi-epitaxy in directed self-assembly applications using photo-decomposable agents
TOKYO ELECTRON LTD8 citations84
US10020195B2Jul 10, 2018
Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists
TOKYO ELECTRON LTD8 citations83
US9519227B2Dec 13, 2016
Metrology for measurement of photosensitizer concentration within photo-sensitized chemically-amplified resist (PS-CAR)
TOKYO ELECTRON LTD12 citations83
US10622267B2Apr 14, 2020
Facilitation of spin-coat planarization over feature topography during substrate fabrication
TOKYO ELECTRON LTD2 citations72
US10429745B2Oct 1, 2019
Photo-sensitized chemically amplified resist (PS-CAR) simulation
TOKYO ELECTRON LTD3 citations72
US9454081B2Sep 27, 2016
Line pattern collapse mitigation through gap-fill material application
TOKYO ELECTRON LTD4 citations72
US9147574B2Sep 29, 2015
Topography minimization of neutral layer overcoats in directed self-assembly applications
TOKYO ELECTRON LTD2 citations63
US12165870B2Dec 10, 2024
Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists
TOKYO ELECTRON LTD0 citations62
US8975009B2Mar 10, 2015
Track processing to remove organic films in directed self-assembly chemo-epitaxy applications
TOKYO ELECTRON LTD3 citations61
US11538684B2Dec 27, 2022
UV-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly
TOKYO ELECTRON LTD0 citations58
US11061332B2Jul 13, 2021
Methods for sensitizing photoresist using flood exposures
TOKYO ELECTRON LTD0 citations52
US9793137B2Oct 17, 2017
Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines
TOKYO ELECTRON LTD1 citations52
US9715172B2Jul 25, 2017
Use of topography to direct assembly of block copolymers in grapho-epitaxial applications
TOKYO ELECTRON LTD0 citations52
US9633847B2Apr 25, 2017
Using sub-resolution openings to aid in image reversal, directed self-assembly, and selective deposition
TOKYO ELECTRON LTD1 citations52
US7595146B1Sep 29, 2009
Method of creating a graded anti-reflective coating
TOKYO ELECTRON LTD0 citations52
US10170354B2Jan 1, 2019
Subtractive methods for creating dielectric isolation structures within open features
TOKYO ELECTRON LTD0 citations42
SOMERVELL MARK H
4 patentsUS8795952B2Aug 5, 2014
Line pattern collapse mitigation through gap-fill material application
SOMERVELL MARK H13 citations82
US8263306B2Sep 11, 2012
Use of blended solvents in defectivity prevention
SOMERVELL MARK H0 citations51
US8263309B2Sep 11, 2012
Composition and method for reducing pattern collapse
SOMERVELL MARK H0 citations51
US8129089B2Mar 6, 2012
Use of blended solvents in defectivity prevention
SOMERVELL MARK H1 citations51
TEXAS INSTRUMENTS INC
4 patentsUS7049242B2May 23, 2006
Post high voltage gate dielectric pattern plasma surface treatment
TEXAS INSTRUMENTS INC6 citations73
US7018925B2Mar 28, 2006
Post high voltage gate oxide pattern high-vacuum outgas surface treatment
TEXAS INSTRUMENTS INC6 citations73
US7339240B2Mar 4, 2008
Dual-gate integrated circuit semiconductor device
TEXAS INSTRUMENTS INC2 citations62
US7402524B2Jul 22, 2008
Post high voltage gate oxide pattern high-vacuum outgas surface treatment
TEXAS INSTRUMENTS INC0 citations51