P

Inventor

SUZUKI TAKAYA

JP48 patents
⚠️ This page may combine multiple inventors who share the name “SUZUKI TAKAYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI LTD

19 patents
US4969031ANov 6, 1990

Semiconductor devices and method for making the same

HITACHI LTD228 citations99
US4943837AJul 24, 1990

Thin film semiconductor device and method of fabricating the same

HITACHI LTD139 citations98
US4745088AMay 17, 1988

Vapor phase growth on semiconductor wafers

HITACHI LTD213 citations98
US4942441AJul 17, 1990

Thin film semiconductor device and method of manufacturing the same

HITACHI LTD144 citations97
US4954855ASep 4, 1990

Thin film transistor formed on insulating substrate

HITACHI LTD57 citations96
US4562637AJan 7, 1986

Method of manufacturing solar battery

HITACHI LTD70 citations96
US4388342AJun 14, 1983

Method for chemical vapor deposition

HITACHI LTD60 citations96
US5736753AApr 7, 1998

Semiconductor device for improved power conversion having a hexagonal-system single-crystal silicon carbide

HITACHI LTD71 citations95
US5153702AOct 6, 1992

Thin film semiconductor device and method for fabricating the same

HITACHI LTD81 citations94
US4100310AJul 11, 1978

Method of doping inpurities

HITACHI LTD53 citations92
US4017341AApr 12, 1977

Method of manufacturing semiconductor integrated circuit with prevention of substrate warpage

HITACHI LTD34 citations88
US4746961AMay 24, 1988

Field effect transistor

HITACHI LTD20 citations82
US4079506AMar 21, 1978

Method of preparing a dielectric-isolated substrate for semiconductor integrated circuitries

HITACHI LTD23 citations78
US4693758ASep 15, 1987

Method of making devices in silicon, on insulator regrown by laser beam

HITACHI LTD15 citations74
US4604159AAug 5, 1986

Method of forming a large number of monocrystalline semiconductor regions on the surface of an insulator

HITACHI LTD7 citations74
US4200877AApr 29, 1980

Temperature-compensated voltage reference diode with intermediate polycrystalline layer

HITACHI LTD17 citations73
US4491562AJan 1, 1985

Thermal fatigue resistant low-melting point solder alloys

HITACHI LTD8 citations72
US4173674ANov 6, 1979

Dielectric insulator separated substrate for semiconductor integrated circuits

HITACHI LTD8 citations68
US4164436AAug 14, 1979

Process for preparation of semiconductor devices utilizing a two-step polycrystalline deposition technique to form a diffusion source

HITACHI LTD6 citations63

SUZUKI MOTOR CORP

9 patents

NEC CORP

4 patents

TEIJIN LTD

3 patents

TOHO TENAX CO LTD

2 patents

KOTOBUKI SANGYO

2 patents

KAWASAKI STEEL CO

1 patent

RENESAS ELECTRONICS CORP

1 patent

KOKUSAI ELECTRIC CO LTD

1 patent

KONDO MASAO

1 patent

TOSOH QUARTZ CORP

1 patent

SUZUKI TAKAYA

1 patent

UNIV TOKYO

1 patent

NISHIJIMA HIROKI

1 patent

FUWA HARUHIKO

1 patent