Inventor
JUNG SANG-IL
KR31 patents
⚠️ This page may combine multiple inventors who share the name “JUNG SANG-IL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
23 patentsUS7057219B2Jun 6, 2006
CMOS image sensor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD23 citations92
US10014285B2Jul 3, 2018
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD8 citations84
US7612392B2Nov 3, 2009
Image sensor with a gate electrode between the photoelectric conversion region and the charge detection region, the gate electrode comprising p-type and n-type regions adjacent to one another and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations83
US9159751B2Oct 13, 2015
Unit pixel of image sensor and image sensor including the same
SAMSUNG ELECTRONICS CO LTD7 citations82
US7955924B2Jun 7, 2011
Image sensor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations81
US7397100B2Jul 8, 2008
Image sensor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations74
US6433369B2Aug 13, 2002
Solid state imaging device for achieving enhanced zooming characteristics and method of making the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US10629643B2Apr 21, 2020
Integrated circuit devices having through-silicon via structures
SAMSUNG ELECTRONICS CO LTD3 citations73
US7859075B2Dec 28, 2010
Image sensor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7459328B2Dec 2, 2008
Image sensor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US5528294AJun 18, 1996
Method for eradicating smear in a charge-coupled device camera
SAMSUNG ELECTRONICS CO LTD5 citations63
US11430824B2Aug 30, 2022
Integrated circuit devices having through-silicon via structures
SAMSUNG ELECTRONICS CO LTD1 citations62
US8017490B2Sep 13, 2011
Methods of forming metal-insulator-metal (MIM) capacitors with passivation layers on dielectric layers
SAMSUNG ELECTRONICS CO LTD3 citations62
US7989861B2Aug 2, 2011
Image sensor and method of stabilizing a black level in an image sensor
SAMSUNG ELECTRONICS CO LTD5 citations62
US7704882B2Apr 27, 2010
Semiconductor devices using fine patterns and methods of forming fine patterns
SAMSUNG ELECTRONICS CO LTD3 citations62
US8003429B2Aug 23, 2011
Method of fabricating image sensor
SAMSUNG ELECTRONICS CO LTD4 citations61
US6686259B2Feb 3, 2004
Method for manufacturing solid state image pick-up device
SAMSUNG ELECTRONICS CO LTD5 citations59
US9793310B2Oct 17, 2017
Image sensor devices using offset pixel patterns
SAMSUNG ELECTRONICS CO LTD1 citations52
US7679113B2Mar 16, 2010
CMOS image sensor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7517715B2Apr 14, 2009
CMOS image sensor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US6573120B2Jun 3, 2003
Solid state imaging device for achieving enhanced zooming characteristics and method of making the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7749852B2Jul 6, 2010
Methods of forming metal-insulator-metal (MIM) capacitors with passivation layers on dielectric layers
SAMSUNG ELECTRONICS CO LTD0 citations51
US8026171B2Sep 27, 2011
Method of fabricating metal interconnection and method of fabricating image sensor using the same
SAMSUNG ELECTRONICS CO LTD0 citations50