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Inventor

WILLE WILLIAM C

US16 patents
⚠️ This page may combine multiple inventors who share the name “WILLE WILLIAM C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

14 patents
US6621392B1Sep 16, 2003

Micro electromechanical switch having self-aligned spacers

IBM211 citations98
US7030031B2Apr 18, 2006

Method for forming damascene structure utilizing planarizing material coupled with diffusion barrier material

IBM69 citations95
US5811357ASep 22, 1998

Process of etching an oxide layer

IBM57 citations95
US7202513B1Apr 10, 2007

Stress engineering using dual pad nitride with selective SOI device architecture

IBM30 citations92
US6461529B1Oct 8, 2002

Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme

IBM34 citations92
US6143635ANov 7, 2000

Field effect transistors with improved implants and method for making such transistors

IBM37 citations92
US6093281AJul 25, 2000

Baffle plate design for decreasing conductance lost during precipitation of polymer precursors in plasma etching chambers

IBM19 citations92
US6040214AMar 21, 2000

Method for making field effect transistors having sub-lithographic gates with vertical side walls

IBM47 citations92
US7183130B2Feb 27, 2007

Magnetic random access memory and method of fabricating thereof

IBM27 citations90
US6207353B1Mar 27, 2001

Resist formulation which minimizes blistering during etching

IBM28 citations90
US7635899B2Dec 22, 2009

Structure and method to form improved isolation in a semiconductor device

IBM14 citations84
US6762667B2Jul 13, 2004

Micro electromechanical switch having self-aligned spacers

IBM10 citations73
US7550364B2Jun 23, 2009

Stress engineering using dual pad nitride with selective SOI device architecture

IBM4 citations63
US6593617B1Jul 15, 2003

Field effect transistors with vertical gate side walls and method for making such transistors

IBM5 citations62

SIEMENS AG

1 patent

SAMSUNG ELECTRONICS CO LTD

1 patent