Inventor
KEUNG LEUNG YING
HK2 patents
Patents
2 patentsUS6566208B2May 20, 2003
Method to form elevated source/drain using poly spacer
CHARTERED SEMICONDUCTOR MFG22 citations89
US6544824B1Apr 8, 2003
Method to form a vertical transistor by first forming a gate/spacer stack, then using selective epitaxy to form source, drain and channel
CHARTERED SEMICONDUCTOR MFG12 citations69