Inventor
JOST MARK E
US34 patents
⚠️ This page may combine multiple inventors who share the name “JOST MARK E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
29 patentsUS6046094AApr 4, 2000
Method of forming wafer alignment patterns
MICRON TECHNOLOGY INC105 citations99
US5739068AApr 14, 1998
Semiconductor processing method of making electrical contact to a node received within a mass of insulating dielectric material
MICRON TECHNOLOGY INC51 citations96
US5700732ADec 23, 1997
Semiconductor wafer, wafer alignment patterns and method of forming wafer alignment patterns
MICRON TECHNOLOGY INC37 citations96
US5966611AOct 12, 1999
Semiconductor processing for forming capacitors by etching polysilicon and coating layer formed over the polysilicon
MICRON TECHNOLOGY INC21 citations93
US5869403AFeb 9, 1999
Semiconductor processing methods of forming a contact opening to a semiconductor substrate
MICRON TECHNOLOGY INC22 citations93
US5925937AJul 20, 1999
Semiconductor wafer, wafer alignment patterns
MICRON TECHNOLOGY INC23 citations92
US6596641B2Jul 22, 2003
Chemical vapor deposition methods
MICRON TECHNOLOGY INC13 citations84
US6137186AOct 24, 2000
Semiconductor wafer, wafer alignment patterns and method of forming wafer alignment patterns
MICRON TECHNOLOGY INC10 citations82
US6025271AFeb 15, 2000
Method of removing surface defects or other recesses during the formation of a semiconductor device
MICRON TECHNOLOGY INC14 citations82
US6689693B2Feb 10, 2004
Methods for utilization of disappearing silicon hard mask for fabrication of semiconductor structures
MICRON TECHNOLOGY INC4 citations74
US6461963B1Oct 8, 2002
Utilization of disappearing silicon hard mask for fabrication of semiconductor structures
MICRON TECHNOLOGY INC6 citations74
US6207529B1Mar 27, 2001
Semiconductor wafer,wafer alignment patterns and method of forming wafer alignment patterns
MICRON TECHNOLOGY INC5 citations74
US6153527ANov 28, 2000
Semiconductor processing method of making electrical contact to a node received within a mass of insulating dielectric material
MICRON TECHNOLOGY INC11 citations74
US6127239AOct 3, 2000
Semiconductor processing methods, and methods of forming capacitors
MICRON TECHNOLOGY INC12 citations74
US6037261AMar 14, 2000
Semiconductor processing method of making electrical contact to a node received within a mass of insulating dielectric material
MICRON TECHNOLOGY INC8 citations74
US5994237ANov 30, 1999
Semiconductor processing methods of forming a contact opening to a semiconductor substrate
MICRON TECHNOLOGY INC13 citations74
US5888877AMar 30, 1999
Method of forming recessed container cells
MICRON TECHNOLOGY INC15 citations74
US5798292AAug 25, 1998
Method of forming wafer alignment patterns
MICRON TECHNOLOGY INC7 citations74
US7659630B2Feb 9, 2010
Interconnect structures with interlayer dielectric
MICRON TECHNOLOGY INC2 citations63
US6982228B2Jan 3, 2006
Methods of etching a contact opening over a node location on a semiconductor substrate
MICRON TECHNOLOGY INC2 citations63
US6828252B2Dec 7, 2004
Method of etching a contact opening
MICRON TECHNOLOGY INC2 citations63
US6534408B2Mar 18, 2003
Utilization of disappearing silicon hard mask for fabrication of semiconductor structures
MICRON TECHNOLOGY INC2 citations63
US6355566B1Mar 12, 2002
Method of removing surface defects or other recesses during the formation of a semiconductor device
MICRON TECHNOLOGY INC3 citations63
US6228772B1May 8, 2001
Method of removing surface defects or other recesses during the formation of a semiconductor device
MICRON TECHNOLOGY INC1 citations63
US7955976B2Jun 7, 2011
Methods of forming semiconductor structures
MICRON TECHNOLOGY INC0 citations52
US6787472B2Sep 7, 2004
Utilization of disappearing silicon hard mask for fabrication of semiconductor structures
MICRON TECHNOLOGY INC0 citations52
US6653241B2Nov 25, 2003
Methods of forming protective segments of material, and etch stops
MICRON TECHNOLOGY INC0 citations48
US6620734B1Sep 16, 2003
Methods of forming protective segments of material, and etch stops
MICRON TECHNOLOGY INC0 citations48
US7326647B2Feb 5, 2008
Dry etching process to form a conductive layer within an opening without use of a mask during the formation of a semiconductor device
MICRON TECHNOLOGY INC0 citations31
IBM
4 patentsUS5128271AJul 7, 1992
High performance vertical bipolar transistor structure via self-aligning processing techniques
IBM71 citations96
US5258318ANov 2, 1993
Method of forming a BiCMOS SOI wafer having thin and thick SOI regions of silicon
IBM58 citations95
US5311539AMay 10, 1994
Roughened sidewall ridge for high power fundamental mode semiconductor ridge waveguide laser operation
IBM21 citations92
US5307357AApr 26, 1994
Protection means for ridge waveguide laser structures using thick organic films
IBM6 citations58