Inventor
NGUYEN PAUL P
US35 patents
⚠️ This page may combine multiple inventors who share the name “NGUYEN PAUL P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GRANDIS INC
22 patentsUS7369427B2May 6, 2008
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
GRANDIS INC201 citations99
US7245462B2Jul 17, 2007
Magnetoresistive element having reduced spin transfer induced noise
GRANDIS INC152 citations99
US7242045B2Jul 10, 2007
Spin transfer magnetic element having low saturation magnetization free layers
GRANDIS INC220 citations99
US7233039B2Jun 19, 2007
Spin transfer magnetic elements with spin depolarization layers
GRANDIS INC171 citations99
US7227773B1Jun 5, 2007
Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
GRANDIS INC154 citations99
US7190611B2Mar 13, 2007
Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
GRANDIS INC283 citations99
US7161829B2Jan 9, 2007
Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements
GRANDIS INC175 citations99
US7106624B2Sep 12, 2006
Magnetic element utilizing spin transfer and an mram device using the magnetic element
GRANDIS INC116 citations99
US7009877B1Mar 7, 2006
Three-terminal magnetostatically coupled spin transfer-based MRAM cell
GRANDIS INC389 citations99
US6992359B2Jan 31, 2006
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
GRANDIS INC425 citations99
US6985385B2Jan 10, 2006
Magnetic memory element utilizing spin transfer switching and storing multiple bits
GRANDIS INC331 citations99
US6958927B1Oct 25, 2005
Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
GRANDIS INC287 citations99
US6933155B2Aug 23, 2005
Methods for providing a sub .15 micron magnetic memory structure
GRANDIS INC263 citations99
US6920063B2Jul 19, 2005
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
GRANDIS INC201 citations99
US6888742B1May 3, 2005
Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element
GRANDIS INC303 citations99
US6847547B2Jan 25, 2005
Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
GRANDIS INC327 citations99
US6838740B2Jan 4, 2005
Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
GRANDIS INC288 citations99
US6829161B2Dec 7, 2004
Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
GRANDIS INC309 citations99
US6714444B2Mar 30, 2004
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
GRANDIS INC470 citations99
US7531882B2May 12, 2009
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
GRANDIS INC42 citations96
US7821088B2Oct 26, 2010
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization
GRANDIS INC12 citations84
US7495303B2Feb 24, 2009
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
GRANDIS INC0 citations52
SOLADIGM INC
5 patentsUS7646526B1Jan 12, 2010
Durable reflection-controllable electrochromic thin film material
SOLADIGM INC55 citations98
US8031389B2Oct 4, 2011
Reflection-controllable electrochromic device using a base metal as a transparent conductor
SOLADIGM INC45 citations94
US7679810B2Mar 16, 2010
Electrical characteristics of electrochromic devices
SOLADIGM INC22 citations88
US7715082B2May 11, 2010
Electrochromic devices based on lithium insertion
SOLADIGM INC15 citations84
US7804635B1Sep 28, 2010
Electrochromic thin-film material
SOLADIGM INC3 citations57