Inventor
HUANG HUAN-TSUNG
TW18 patents
⚠️ This page may combine multiple inventors who share the name “HUANG HUAN-TSUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
8 patentsUS7321139B2Jan 22, 2008
Transistor layout for standard cell with optimized mechanical stress effect
TAIWAN SEMICONDUCTOR MFG20 citations91
US9136329B2Sep 15, 2015
Semiconductor structure with dielectric-sealed doped region
TAIWAN SEMICONDUCTOR MFG10 citations83
US8357581B2Jan 22, 2013
Transistor performance improving method with metal gate
TAIWAN SEMICONDUCTOR MFG5 citations83
US8030718B2Oct 4, 2011
Local charge and work function engineering on MOSFET
TAIWAN SEMICONDUCTOR MFG8 citations83
US7768072B2Aug 3, 2010
Silicided metal gate for multi-threshold voltage configuration
TAIWAN SEMICONDUCTOR MFG6 citations63
US8754487B2Jun 17, 2014
Semiconductor device with metal gate
TAIWAN SEMICONDUCTOR MFG1 citations62
US8012817B2Sep 6, 2011
Transistor performance improving method with metal gate
TAIWAN SEMICONDUCTOR MFG4 citations62
US7759210B2Jul 20, 2010
Method for forming a MOS device with reduced transient enhanced diffusion
TAIWAN SEMICONDUCTOR MFG1 citations49
TAIWAN SEMICONDUCTOR MFG CO LTD
5 patentsUS9812444B2Nov 7, 2017
Fin-type resistor
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US10998443B2May 4, 2021
Epi block structure in semiconductor product providing high breakdown voltage
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11621351B2Apr 4, 2023
Epi block structure in semiconductor product providing high breakdown voltage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9443925B2Sep 13, 2016
Semiconductor structure with dielectric-sealed doped region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9691758B1Jun 27, 2017
Fin-type resistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50