Inventor
KE CHUNG-HU
TW31 patents
⚠️ This page may combine multiple inventors who share the name “KE CHUNG-HU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
26 patentsUS7238564B2Jul 3, 2007
Method of forming a shallow trench isolation structure
TAIWAN SEMICONDUCTOR MFG64 citations98
US7190036B2Mar 13, 2007
Transistor mobility improvement by adjusting stress in shallow trench isolation
TAIWAN SEMICONDUCTOR MFG68 citations98
US6902965B2Jun 7, 2005
Strained silicon structure
TAIWAN SEMICONDUCTOR MFG85 citations98
US7358571B2Apr 15, 2008
Isolation spacer for thin SOI devices
TAIWAN SEMICONDUCTOR MFG17 citations93
US7355262B2Apr 8, 2008
Diffusion topography engineering for high performance CMOS fabrication
TAIWAN SEMICONDUCTOR MFG34 citations93
US6974755B2Dec 13, 2005
Isolation structure with nitrogen-containing liner and methods of manufacture
TAIWAN SEMICONDUCTOR MFG19 citations93
US6949443B2Sep 27, 2005
High performance semiconductor devices fabricated with strain-induced processes and methods for making same
TAIWAN SEMICONDUCTOR MFG27 citations93
US7176537B2Feb 13, 2007
High performance CMOS with metal-gate and Schottky source/drain
TAIWAN SEMICONDUCTOR MFG21 citations92
US7466008B2Dec 16, 2008
BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture
TAIWAN SEMICONDUCTOR MFG35 citations91
US7737532B2Jun 15, 2010
Hybrid Schottky source-drain CMOS for high mobility and low barrier
TAIWAN SEMICONDUCTOR MFG15 citations84
US7465620B2Dec 16, 2008
Transistor mobility improvement by adjusting stress in shallow trench isolation
TAIWAN SEMICONDUCTOR MFG13 citations84
US7745904B2Jun 29, 2010
Shallow trench isolation structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG7 citations74
US7394136B2Jul 1, 2008
High performance semiconductor devices fabricated with strain-induced processes and methods for making same
TAIWAN SEMICONDUCTOR MFG7 citations74
US8030210B2Oct 4, 2011
Contact barrier structure and manufacturing methods
TAIWAN SEMICONDUCTOR MFG6 citations73
US7709903B2May 4, 2010
Contact barrier structure and manufacturing methods
TAIWAN SEMICONDUCTOR MFG6 citations73
US8039284B2Oct 18, 2011
Dual metal silicides for lowering contact resistance
TAIWAN SEMICONDUCTOR MFG4 citations63
US7875959B2Jan 25, 2011
Semiconductor structure having selective silicide-induced stress and a method of producing same
TAIWAN SEMICONDUCTOR MFG4 citations63
US7569896B2Aug 4, 2009
Transistors with stressed channels
TAIWAN SEMICONDUCTOR MFG6 citations63
US7511348B2Mar 31, 2009
MOS transistors with selectively strained channels
TAIWAN SEMICONDUCTOR MFG6 citations63
US7495267B2Feb 24, 2009
Semiconductor structure having a strained region and a method of fabricating same
TAIWAN SEMICONDUCTOR MFG2 citations63
US7208754B2Apr 24, 2007
Strained silicon structure
TAIWAN SEMICONDUCTOR MFG4 citations63
US7985652B2Jul 26, 2011
Metal stress memorization technology
TAIWAN SEMICONDUCTOR MFG2 citations62
US7582934B2Sep 1, 2009
Isolation spacer for thin SOI devices
TAIWAN SEMICONDUCTOR MFG0 citations52
US7538398B2May 26, 2009
System and method for forming a semiconductor device source/drain contact
TAIWAN SEMICONDUCTOR MFG0 citations52
US7098119B2Aug 29, 2006
Thermal anneal process for strained-Si devices
TAIWAN SEMICONDUCTOR MFG0 citations52
US7803718B2Sep 28, 2010
BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture
TAIWAN SEMICONDUCTOR MFG0 citations51