Inventor
SHIMURA TERUYUKI
JP29 patents
⚠️ This page may combine multiple inventors who share the name “SHIMURA TERUYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
27 patentsUS7145397B2Dec 5, 2006
Output overvoltage protection circuit for power amplifier
MITSUBISHI ELECTRIC CORP69 citations98
US5864169AJan 26, 1999
Semiconductor device including plated heat sink and airbridge for heat dissipation
MITSUBISHI ELECTRIC CORP65 citations96
US5889434AMar 30, 1999
Microwave power amplifier
MITSUBISHI ELECTRIC CORP33 citations92
US5760457AJun 2, 1998
Bipolar transistor circuit element having base ballasting resistor
MITSUBISHI ELECTRIC CORP18 citations83
US4977100ADec 11, 1990
Method of fabricating a MESFET
MITSUBISHI ELECTRIC CORP22 citations82
US5414273AMay 9, 1995
Heterojunction bipolar transistor
MITSUBISHI ELECTRIC CORP19 citations81
US5726468AMar 10, 1998
Compound semiconductor bipolar transistor
MITSUBISHI ELECTRIC CORP10 citations74
US5357121AOct 18, 1994
Optoelectronic integrated circuit
MITSUBISHI ELECTRIC CORP17 citations74
US5231040AJul 27, 1993
Method of making a field effect transistor
MITSUBISHI ELECTRIC CORP14 citations74
US5212103AMay 18, 1993
Method of making a heterojunction bipolar transistor
MITSUBISHI ELECTRIC CORP8 citations74
US5192700AMar 9, 1993
Method of making field effect transistor
MITSUBISHI ELECTRIC CORP11 citations74
US5101245AMar 31, 1992
Field effect transistor and method for making same
MITSUBISHI ELECTRIC CORP9 citations74
US4967254AOct 30, 1990
Semiconductor device
MITSUBISHI ELECTRIC CORP9 citations74
US6861906B2Mar 1, 2005
High-frequency semiconductor device
MITSUBISHI ELECTRIC CORP7 citations73
US6081003AJun 27, 2000
Heterojunction bipolar transistor with ballast resistor
MITSUBISHI ELECTRIC CORP6 citations73
US5793067AAug 11, 1998
Hybrid transistor structure with widened leads for reduced thermal resistance
MITSUBISHI ELECTRIC CORP14 citations73
US5719530AFeb 17, 1998
High power bipolar transistor device
MITSUBISHI ELECTRIC CORP10 citations72
US7605648B2Oct 20, 2009
Power amplifier
MITSUBISHI ELECTRIC CORP4 citations63
US5973543AOct 26, 1999
Bias circuit for bipolar transistor
MITSUBISHI ELECTRIC CORP5 citations63
US5698871ADec 16, 1997
Heterojunction bipolar transistor
MITSUBISHI ELECTRIC CORP4 citations63
US5369044ANov 29, 1994
Method for producing a semiconductor device
MITSUBISHI ELECTRIC CORP4 citations63
US5270556ADec 14, 1993
Semiconductor device with upper and lower gate electrode structure
MITSUBISHI ELECTRIC CORP4 citations63
US5237192AAug 17, 1993
MESFET semiconductor device having a T-shaped gate electrode
MITSUBISHI ELECTRIC CORP6 citations63
US5063167ANov 5, 1991
Method of producing a bipolar transistor with spacers
MITSUBISHI ELECTRIC CORP5 citations63
US7907009B2Mar 15, 2011
High frequency amplifier
MITSUBISHI ELECTRIC CORP5 citations62
US6271098B1Aug 7, 2001
Heterojunction bipolar transistor and method for producing the same
MITSUBISHI ELECTRIC CORP2 citations62
US5163169ANov 10, 1992
Frequency divider having the power supply connected to the gaas substrate
MITSUBISHI ELECTRIC CORP6 citations61