P

Inventor

SHIMURA TERUYUKI

JP29 patents
⚠️ This page may combine multiple inventors who share the name “SHIMURA TERUYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

27 patents
US7145397B2Dec 5, 2006

Output overvoltage protection circuit for power amplifier

MITSUBISHI ELECTRIC CORP69 citations98
US5864169AJan 26, 1999

Semiconductor device including plated heat sink and airbridge for heat dissipation

MITSUBISHI ELECTRIC CORP65 citations96
US5889434AMar 30, 1999

Microwave power amplifier

MITSUBISHI ELECTRIC CORP33 citations92
US5760457AJun 2, 1998

Bipolar transistor circuit element having base ballasting resistor

MITSUBISHI ELECTRIC CORP18 citations83
US4977100ADec 11, 1990

Method of fabricating a MESFET

MITSUBISHI ELECTRIC CORP22 citations82
US5414273AMay 9, 1995

Heterojunction bipolar transistor

MITSUBISHI ELECTRIC CORP19 citations81
US5726468AMar 10, 1998

Compound semiconductor bipolar transistor

MITSUBISHI ELECTRIC CORP10 citations74
US5357121AOct 18, 1994

Optoelectronic integrated circuit

MITSUBISHI ELECTRIC CORP17 citations74
US5231040AJul 27, 1993

Method of making a field effect transistor

MITSUBISHI ELECTRIC CORP14 citations74
US5212103AMay 18, 1993

Method of making a heterojunction bipolar transistor

MITSUBISHI ELECTRIC CORP8 citations74
US5192700AMar 9, 1993

Method of making field effect transistor

MITSUBISHI ELECTRIC CORP11 citations74
US5101245AMar 31, 1992

Field effect transistor and method for making same

MITSUBISHI ELECTRIC CORP9 citations74
US4967254AOct 30, 1990

Semiconductor device

MITSUBISHI ELECTRIC CORP9 citations74
US6861906B2Mar 1, 2005

High-frequency semiconductor device

MITSUBISHI ELECTRIC CORP7 citations73
US6081003AJun 27, 2000

Heterojunction bipolar transistor with ballast resistor

MITSUBISHI ELECTRIC CORP6 citations73
US5793067AAug 11, 1998

Hybrid transistor structure with widened leads for reduced thermal resistance

MITSUBISHI ELECTRIC CORP14 citations73
US5719530AFeb 17, 1998

High power bipolar transistor device

MITSUBISHI ELECTRIC CORP10 citations72
US7605648B2Oct 20, 2009

Power amplifier

MITSUBISHI ELECTRIC CORP4 citations63
US5973543AOct 26, 1999

Bias circuit for bipolar transistor

MITSUBISHI ELECTRIC CORP5 citations63
US5698871ADec 16, 1997

Heterojunction bipolar transistor

MITSUBISHI ELECTRIC CORP4 citations63
US5369044ANov 29, 1994

Method for producing a semiconductor device

MITSUBISHI ELECTRIC CORP4 citations63
US5270556ADec 14, 1993

Semiconductor device with upper and lower gate electrode structure

MITSUBISHI ELECTRIC CORP4 citations63
US5237192AAug 17, 1993

MESFET semiconductor device having a T-shaped gate electrode

MITSUBISHI ELECTRIC CORP6 citations63
US5063167ANov 5, 1991

Method of producing a bipolar transistor with spacers

MITSUBISHI ELECTRIC CORP5 citations63
US7907009B2Mar 15, 2011

High frequency amplifier

MITSUBISHI ELECTRIC CORP5 citations62
US6271098B1Aug 7, 2001

Heterojunction bipolar transistor and method for producing the same

MITSUBISHI ELECTRIC CORP2 citations62
US5163169ANov 10, 1992

Frequency divider having the power supply connected to the gaas substrate

MITSUBISHI ELECTRIC CORP6 citations61

KYOCERA CORP

1 patent

MITUBISHI DENKI KABUSHIKI KAIS

1 patent