Inventor
ONO ATSUKI
JP15 patents
⚠️ This page may combine multiple inventors who share the name “ONO ATSUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
12 patentsUS6432776B1Aug 13, 2002
Method of manufacturing semiconductor device
NEC CORP73 citations95
US6436783B1Aug 20, 2002
Method of forming MOS transistor
NEC CORP38 citations92
US6261889B1Jul 17, 2001
Manufacturing method of semiconductor device
NEC CORP42 citations92
US6166413ADec 26, 2000
Semiconductor device having field effect transistors different in thickness of gate electrodes and process of fabrication thereof
NEC CORP26 citations92
US6127711AOct 3, 2000
Semiconductor device having plural air gaps for decreasing parasitic capacitance
NEC CORP44 citations92
US5966606AOct 12, 1999
Method for manufacturing a MOSFET having a side-wall film formed through nitridation of the gate electrode
NEC CORP25 citations92
US5780896AJul 14, 1998
Semiconductor device having shallow impurity region without short-circuit between gate electrode and source and drain regions and process of fabrication thereof
NEC CORP39 citations92
US6300239B1Oct 9, 2001
Method of manufacturing semiconductor device
NEC CORP16 citations83
US6489236B1Dec 3, 2002
Method for manufacturing a semiconductor device having a silicide layer
NEC CORP9 citations74
US6362059B2Mar 26, 2002
Production of a semiconductor device having a P-well
NEC CORP11 citations72
US6518075B2Feb 11, 2003
Method of forming S/D extension regions and pocket regions based on formulated relationship between design and measured values of gate length
NEC CORP3 citations62
US6486012B1Nov 26, 2002
Semiconductor device having field effect transistors different in thickness of gate electrodes and process of fabrication thereof
NEC CORP4 citations62