Inventor
KIM WON-JOO
KR82 patents
⚠️ This page may combine multiple inventors who share the name “KIM WON-JOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
39 patentsUS7622761B2Nov 24, 2009
Non-volatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD247 citations99
US7626685B2Dec 1, 2009
Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors
SAMSUNG ELECTRONICS CO LTD58 citations98
US5851918ADec 22, 1998
Methods of fabricating liquid crystal display elements and interconnects therefor
SAMSUNG ELECTRONICS CO LTD57 citations95
US8017991B2Sep 13, 2011
Non-volatile memory device and methods of operating and fabricating the same
SAMSUNG ELECTRONICS CO LTD35 citations93
US7863672B2Jan 4, 2011
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD24 citations93
US7700935B2Apr 20, 2010
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD43 citations93
US7560344B2Jul 14, 2009
Semiconductor device having a pair of fins and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations93
US7514325B2Apr 7, 2009
Fin-FET having GAA structure and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD23 citations93
US7282759B2Oct 16, 2007
Memory device having serially connected resistance nodes
SAMSUNG ELECTRONICS CO LTD31 citations93
US8385122B2Feb 26, 2013
Non-volatile memory device having stacked structure, and memory card and electronic system including the same
SAMSUNG ELECTRONICS CO LTD18 citations92
US7352037B2Apr 1, 2008
Semiconductor device and random access memory having single gate electrode corresponding to a pair of channel regions
SAMSUNG ELECTRONICS CO LTD32 citations92
US7192873B1Mar 20, 2007
Method of manufacturing nano scale semiconductor device using nano particles
SAMSUNG ELECTRONICS CO LTD23 citations92
US7294855B2Nov 13, 2007
Contact structure of semiconductor device, manufacturing method thereof, thin film transistor array panel including contact structure, and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD26 citations91
US5444026AAug 22, 1995
Method for manufacturing semiconductor device by forming insulator-layer to suppress bubble formation
SAMSUNG ELECTRONICS CO LTD21 citations87
US7932551B2Apr 26, 2011
Nonvolatile memory device and method of fabricating the same comprising a dual fin structure
SAMSUNG ELECTRONICS CO LTD11 citations84
US7885115B2Feb 8, 2011
Non-volatile memory devices and methods of operating non-volatile memory devices
SAMSUNG ELECTRONICS CO LTD10 citations84
US7796432B2Sep 14, 2010
Non-volatile memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7663166B2Feb 16, 2010
Wire-type semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD19 citations84
US7656696B2Feb 2, 2010
Resistive memory device having resistor part for controlling switching window
SAMSUNG ELECTRONICS CO LTD10 citations84
US7639524B2Dec 29, 2009
Multi-bit nonvolatile memory devices and methods of operating the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US7622765B2Nov 24, 2009
Non-volatile memory device and a method of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7492635B2Feb 17, 2009
NOR-type hybrid multi-bit non-volatile memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD15 citations84
US7436704B2Oct 14, 2008
Non-volatile memory devices and method thereof
SAMSUNG ELECTRONICS CO LTD14 citations84
US7419859B2Sep 2, 2008
Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions
SAMSUNG ELECTRONICS CO LTD13 citations84
US7361554B2Apr 22, 2008
Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device
SAMSUNG ELECTRONICS CO LTD15 citations84
US7829932B2Nov 9, 2010
Semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations83
US7883942B2Feb 8, 2011
Contact structure of semiconductor device, manufacturing method thereof, thin film transistor array panel including contact structure, and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD14 citations82
US7833890B2Nov 16, 2010
Semiconductor device having a pair of fins and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations74
US7807517B2Oct 5, 2010
Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions
SAMSUNG ELECTRONICS CO LTD7 citations74
US7675779B2Mar 9, 2010
Non-volatile memory devices and methods of operating the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7256447B2Aug 14, 2007
Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device
SAMSUNG ELECTRONICS CO LTD9 citations74
US9711675B2Jul 18, 2017
Sensing pixel and image sensor including the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US7990794B2Aug 2, 2011
Semiconductor apparatuses and methods of operating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7990779B2Aug 2, 2011
Method of operating semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations63
US7986545B2Jul 26, 2011
Non-volatile memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7947590B2May 24, 2011
Method of manufacturing a non-volatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7894265B2Feb 22, 2011
Non-volatile memory device and operation method of the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7813180B2Oct 12, 2010
Non-volatile memory devices and methods of operating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7750393B2Jul 6, 2010
Non-volatile memory device with independent channel regions adjacent different sides of a common control gate
SAMSUNG ELECTRONICS CO LTD6 citations63
MICRON TECHNOLOGY INC
6 patentsUS6471879B2Oct 29, 2002
Buffer layer in flat panel display
MICRON TECHNOLOGY INC61 citations94
US6413135B1Jul 2, 2002
Spacer fabrication for flat panel displays
MICRON TECHNOLOGY INC23 citations91
US6525462B1Feb 25, 2003
Conductive spacer for field emission displays and method
MICRON TECHNOLOGY INC6 citations74
US6491561B2Dec 10, 2002
Conductive spacer for field emission displays and method
MICRON TECHNOLOGY INC4 citations74
US6716081B2Apr 6, 2004
Spacer fabrication for flat panel displays
MICRON TECHNOLOGY INC10 citations72
US6322712B1Nov 27, 2001
Buffer layer in flat panel display
MICRON TECHNOLOGY INC10 citations72
JIN YOUNG-GU
1 patentPARK YOUNG-SOO
1 patentSAMSUNG ELECRONICS CO LTD
1 patentSAMSUNG ELCTRONICS CO LTD
1 patentPARK YOON-DONG
1 patentShowing the top 50 of 82 patents by PatentIndex Score.