Inventor

HUANG SHENG-HUANG

TW62 patents

⚠️ This page may combine multiple inventors who share the name “HUANG SHENG-HUANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

49 patents

US10522740B2Dec 31, 2019

Techniques for MRAM MTJ top electrode to metal layer interface including spacer

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations94

US10790439B2Sep 29, 2020

Memory cell with top electrode via

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations93

US10797230B2Oct 6, 2020

Techniques for MRAM MTJ top electrode to metal layer interface including spacer

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84

US10727274B2Jul 28, 2020

Techniques for MRAM top electrode via connection

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84

US10504958B2Dec 10, 2019

Semiconductor structure and manufacturing method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84

US10164169B2Dec 25, 2018

Memory device having a single bottom electrode layer

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84

US11075335B2Jul 27, 2021

Techniques for MRAM MTJ top electrode connection

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83

US10727272B2Jul 28, 2020

Semiconductor structure and manufacturing method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83

US11551736B2Jan 10, 2023

Semiconductor device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75

US11818962B2Nov 14, 2023

Sidewall spacer structure for memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11437433B2Sep 6, 2022

Techniques for MRAM top electrode via connection

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US11322543B2May 3, 2022

Method for MRAM top electrode connection

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US11189659B2Nov 30, 2021

Techniques for MRAM MTJ top electrode to via interface

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11121308B2Sep 14, 2021

Sidewall spacer structure for memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US11043531B2Jun 22, 2021

Semiconductor structure and manufacturing method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US11005032B2May 11, 2021

Techniques for MRAM MTJ top electrode to metal layer interface including spacer

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73

US10950656B2Mar 16, 2021

Semiconductor memory device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US10686125B2Jun 16, 2020

Memory device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US10510803B2Dec 17, 2019

Semiconductor memory device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US10270026B2Apr 23, 2019

Multilayered spacer structure for a magnetic tunneling junction and method of manufacturing

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11889769B2Jan 30, 2024

Memory cell with top electrode via

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72

US11469372B2Oct 11, 2022

Memory cell with top electrode via

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72

US12274072B2Apr 8, 2025

Semiconductor memory device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11569443B2Jan 31, 2023

Semiconductor device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63

US10957847B2Mar 23, 2021

Multilayered spacer structure for a magnetic tunneling junction and method of manufacturing

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12581864B2Mar 17, 2026

Memory device and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12563975B2Feb 24, 2026

Magnetic memory device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12550619B2Feb 10, 2026

Techniques for MRAM MTJ top electrode connection

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12543506B2Feb 3, 2026

Memory device and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12520731B2Jan 6, 2026

Memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12444650B2Oct 14, 2025

Etch stop layer for memory device formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12426274B2Sep 23, 2025

Method for MRAM top electrode connection

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12426514B2Sep 23, 2025

Techniques for MRAM MTJ top electrode connection

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12342730B2Jun 24, 2025

Magnetic tunnel junction structures with protection outer layers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12329039B2Jun 10, 2025

Magnetic tunnel junction structures with protection outer layers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12284814B2Apr 22, 2025

Semiconductor structure and manufacturing method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12274182B2Apr 8, 2025

Sidewall spacer structure for memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12274183B2Apr 8, 2025

Memory cell with top electrode via

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12250826B2Mar 11, 2025

Integrated circuit device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12223989B2Feb 11, 2025

Semiconductor device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12027420B2Jul 2, 2024

Etch stop layer for memory device formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11910619B2Feb 20, 2024

Method for MRAM top electrode connection

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11832529B2Nov 28, 2023

Memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11723219B2Aug 8, 2023

Semiconductor structure and manufacturing method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11678493B2Jun 13, 2023

Semiconductor structure and manufacturing method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11489107B2Nov 1, 2022

Memory cell with top electrode via

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11469269B2Oct 11, 2022

Techniques for MRAM top electrode via connection

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11380580B2Jul 5, 2022

Etch stop layer for memory device formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11316096B2Apr 26, 2022

Memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

IND TECH RES INST

1 patent

US9231191B2Jan 5, 2016

Magnetic tunnel junction device and method of making same

IND TECH RES INST33 citations94

Showing the top 50 of 62 patents by PatentIndex Score.