Inventor

HU ZHENYU

US56 patents

⚠️ This page may combine multiple inventors who share the name “HU ZHENYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HU ZHENYU

GLOBALFOUNDRIES INC

Methods of forming diffusion breaks on integrated circuit products comprised of finFET devices

Methods of forming gate structures by a gate-cut-last process and the resulting structures

Forming a diffusion break during a RMG process

Gate cut method

Methods of removing fins so as to form isolation structures on products that include FinFET semiconductor devices

Method for forming single diffusion breaks between finFET devices and the resulting devices

Fin-type field effect transistors with single-diffusion breaks and method

Method for improved fin profile

Self-aligned gate contact and cross-coupling contact formation

Integrated circuit structure including single diffusion break and end isolation region, and methods of forming same

Multiple-layer spacers for field-effect transistors

T-shaped fin isolation region and methods of fabrication

Gate cut method

Wrap-all-around contact for nanosheet-FET and method of forming same

STI inner spacer to mitigate SDB loading

Scaled memory structures or other logic devices with middle of the line cuts

Fin-type field effect transistors with single-diffusion breaks and method

Semiconductor structure with uniform gate heights

Methods for fin thinning providing improved SCE and S/D EPI growth

Method to reduce FinFET short channel gate height

Uniform gate height for semiconductor structure with N and P type fins

Formation of enhanced faceted raised source/drain EPI material for transistor devices

Formation of enhanced faceted raised source/drain epi material for transistor devices

Overlay performance for a fin field effect transistor device

Epitaxial block layer for a fin field effect transistor device

Uniform exposed raised structures for non-planar semiconductor devices

Method to reduce FinFET short channel gate height

Multiple-layer spacers for field-effect transistors

GLOBALFOUNDRIES US INC

Fin-based lateral bipolar junction transistor and method

Single fin structures

Single fin structures

Single diffusion break device for FDSOI

Multi-channel replacement metal gate device

Fin on silicon-on-insulator

Single fin structures

Lateral bipolar transistor structure with base over semiconductor buffer and related method

Lateral bipolar transistor

Lateral bipolar transistor structure with base layer of varying horizontal width and methods to form same

Lateral bipolar transistor

Silicon germanium fins and integration methods

Device structures for a high-voltage semiconductor device

Bipolar junction transistors with a nanosheet intrinsic base

High-voltage semiconductor device structures

Lateral bipolar junction transistor device and method of making such a device

BOSCH GMBH ROBERT

High-current plug-in connection with multi-arm contact lamellae

Contact element

Catch element of a contact having a nose-shaped projection

SHENZHEN HOLATEK CO LTD

Smart projector

Projector

Projector