Inventor
KIM SEOKHOON
US47 patents
⚠️ This page may combine multiple inventors who share the name “KIM SEOKHOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
42 patentsUS10361100B2Jul 23, 2019
Apparatus and methods for treating a substrate
SAMSUNG ELECTRONICS CO LTD7 citations83
US11888026B2Jan 30, 2024
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD3 citations73
US10062754B2Aug 28, 2018
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US9412731B2Aug 9, 2016
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations73
US11948942B2Apr 2, 2024
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11862679B2Jan 2, 2024
Semiconductor device having increased contact area between a source/drain pattern and an active contact
SAMSUNG ELECTRONICS CO LTD2 citations72
US11631674B2Apr 18, 2023
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11569350B2Jan 31, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11302779B2Apr 12, 2022
Semiconductor device having increased contact area between a source/drain pattern and an active contact
SAMSUNG ELECTRONICS CO LTD5 citations72
US9941110B2Apr 10, 2018
Manufacturing method and fluid supply system for treating substrate
SAMSUNG ELECTRONICS CO LTD3 citations72
US9627233B2Apr 18, 2017
Substrate treating apparatus
SAMSUNG ELECTRONICS CO LTD4 citations72
US9595434B2Mar 14, 2017
Apparatus and methods for manufacturing semiconductor devices and treating substrates
SAMSUNG ELECTRONICS CO LTD6 citations72
US9524864B2Dec 20, 2016
Manufacturing method and fluid supply system for treating substrate
SAMSUNG ELECTRONICS CO LTD3 citations72
US11217667B2Jan 4, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations71
US10903108B2Jan 26, 2021
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US9534839B2Jan 3, 2017
Apparatus and methods for treating a substrate
SAMSUNG ELECTRONICS CO LTD5 citations70
US9252244B2Feb 2, 2016
Methods of selectively growing source/drain regions of fin field effect transistor and method of manufacturing semiconductor device including a fin field effect transistor
SAMSUNG ELECTRONICS CO LTD4 citations70
US12256564B2Mar 18, 2025
Semiconductor device having a liner layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12249606B2Mar 11, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11888028B2Jan 30, 2024
Semiconductor device having a liner layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11881510B2Jan 23, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11482596B2Oct 25, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations62
US11417731B2Aug 16, 2022
Semiconductor device including a field effect transistor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12396224B2Aug 19, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11699613B2Jul 11, 2023
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11069776B2Jul 20, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations61
US9530870B2Dec 27, 2016
Methods of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations61
US12557362B2Feb 17, 2026
Semiconductor device including source/drain pattern with varied germanium concentrations
SAMSUNG ELECTRONICS CO LTD0 citations60
US11735632B2Aug 22, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11563089B2Jan 24, 2023
Method for manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11145723B2Oct 12, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US12538517B2Jan 27, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12477796B2Nov 18, 2025
Semiconductor device including a vertically stacked channel pattern and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12426359B2Sep 23, 2025
Semiconductor device including source/drain regions having triangular tip regions
SAMSUNG ELECTRONICS CO LTD0 citations51
US12328921B2Jun 10, 2025
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10644106B2May 5, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12224357B2Feb 11, 2025
Semiconductor transistor device including multiple channel layers with different materials
SAMSUNG ELECTRONICS CO LTD0 citations50
US12543338B2Feb 3, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations49
US12453148B2Oct 21, 2025
Integrated circuit device including field-effect transistor with controlled sizes and configurations
SAMSUNG ELECTRONICS CO LTD0 citations49
US12414337B2Sep 9, 2025
Semiconductor device including reflow layers
SAMSUNG ELECTRONICS CO LTD0 citations49
US12382716B2Aug 5, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations49
US12471345B2Nov 11, 2025
Semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations46