Inventor
KOUNO KENJI
JP54 patents
⚠️ This page may combine multiple inventors who share the name “KOUNO KENJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
DENSO CORP
17 patentsUS6385028B1May 7, 2002
Surge preventing circuit for an insulated gate type transistor
DENSO CORP97 citations98
US10056450B2Aug 21, 2018
Semiconductor device
DENSO CORP23 citations94
US6365932B1Apr 2, 2002
Power MOS transistor
DENSO CORP281 citations94
US10256234B2Apr 9, 2019
Semiconductor device
DENSO CORP11 citations84
US10170607B2Jan 1, 2019
Semiconductor device
DENSO CORP10 citations84
US10062753B2Aug 28, 2018
Semiconductor device
DENSO CORP12 citations84
US8988105B2Mar 24, 2015
Semiconductor device having diode-built-in IGBT and semiconductor device having diode-built-in DMOS
DENSO CORP5 citations84
US7728382B2Jun 1, 2010
Semiconductor device having diode and IGBT
DENSO CORP11 citations84
US7692214B2Apr 6, 2010
Semiconductor device having IGBT cell and diode cell and method for designing the same
DENSO CORP8 citations84
US9129851B2Sep 8, 2015
Semiconductor device
DENSO CORP16 citations83
US9595500B2Mar 14, 2017
Semiconductor device
DENSO CORP4 citations73
US9224730B2Dec 29, 2015
Semiconductor device
DENSO CORP4 citations73
US8026572B2Sep 27, 2011
Semiconductor device and method for manufacturing same
DENSO CORP3 citations62
US6943383B2Sep 13, 2005
Diode and producing method thereof
DENSO CORP2 citations61
US12575150B2Mar 10, 2026
Semiconductor device
DENSO CORP0 citations52
US12363944B2Jul 15, 2025
Semiconductor device
DENSO CORP0 citations52
US9184158B2Nov 10, 2015
Semiconductor device having diode-built-in IGBT and semiconductor device having diode-built-in DMOS
DENSO CORP0 citations52
MITSUBISHI GAS CHEMICAL CO
8 patentsUS7118806B2Oct 10, 2006
Plastic molded product having photochromic characteristic and/or polarizing characteristics
MITSUBISHI GAS CHEMICAL CO22 citations92
US6986946B2Jan 17, 2006
Transparent synthetic resin laminate having photochromism
MITSUBISHI GAS CHEMICAL CO21 citations92
US6797383B2Sep 28, 2004
Synthetic resin laminate having both polarization characteristic and photochromism characteristic
MITSUBISHI GAS CHEMICAL CO45 citations92
US10543961B2Jan 28, 2020
Container cap and production method for container cap
MITSUBISHI GAS CHEMICAL CO1 citations62
US10300648B2May 28, 2019
Method for producing a polyolefin structure
MITSUBISHI GAS CHEMICAL CO1 citations62
US5028640AJul 2, 1991
Aromatic polycarbonate resin composition for molding
MITSUBISHI GAS CHEMICAL CO6 citations62
US7638202B2Dec 29, 2009
Stretched polyamide films
MITSUBISHI GAS CHEMICAL CO3 citations61
US11111365B2Sep 7, 2021
Polyolefin structure
MITSUBISHI GAS CHEMICAL CO0 citations52
TSUZUKI YUKIO
6 patentsUS8080853B2Dec 20, 2011
Semiconductor device including insulated gate bipolar transistor and diode
TSUZUKI YUKIO21 citations92
US8168999B2May 1, 2012
Semiconductor device having IGBT and diode
TSUZUKI YUKIO17 citations84
US8841699B2Sep 23, 2014
Semiconductor device including insulated gate bipolar transistor and diode
TSUZUKI YUKIO11 citations83
US8288824B2Oct 16, 2012
Semiconductor device including insulated gate bipolar transistor and diode
TSUZUKI YUKIO7 citations83
US8729600B2May 20, 2014
Insulated gate bipolar transistor (IGBT) with hole stopper layer
TSUZUKI YUKIO5 citations72
US8455958B2Jun 4, 2013
Insulated gate semiconductor device with well region edge positioned within ring-shaped buffer trench
TSUZUKI YUKIO1 citations52
FUJI ELECTRIC CO LTD
6 patentsUS10658360B2May 19, 2020
Semiconductor device with an insulated-gate bipolar transistor region and a diode region
FUJI ELECTRIC CO LTD2 citations72
US11869961B2Jan 9, 2024
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations62
US11264490B2Mar 1, 2022
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations62
US10629678B2Apr 21, 2020
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD1 citations62
US9761663B2Sep 12, 2017
Semiconductor device
FUJI ELECTRIC CO LTD1 citations52
US9437678B2Sep 6, 2016
Fabrication method of semiconductor device, evaluation method of semiconductor device, and semiconductor device
FUJI ELECTRIC CO LTD0 citations52
KOUNO KENJI
5 patentsUS8072241B2Dec 6, 2011
Semiconductor device having diode-built-in IGBT and semiconductor device having diode-built-in DMOS
KOUNO KENJI37 citations95
US8451023B2May 28, 2013
Semiconductor device having diode-built-in IGBT and semiconductor device having diode-built-in DMOS
KOUNO KENJI8 citations83
US8405122B2Mar 26, 2013
Insulated gate semiconductor device
KOUNO KENJI12 citations83
US8299539B2Oct 30, 2012
Semiconductor device having IGBT and FWD on same substrate
KOUNO KENJI17 citations83
US8648385B2Feb 11, 2014
Semiconductor device
KOUNO KENJI5 citations72
TANABE HIROMITSU
3 patentsKYOCERA CORP
1 patentUNIV TOKYO
1 patentGS YUASA INT LTD
1 patentOZEKI YOSHIHIKO
1 patentNEC CORP
1 patentShowing the top 50 of 54 patents by PatentIndex Score.