Inventor
CHENG TUNG-WEN
TW62 patents
Patents
50 patentsUS10546956B2Jan 28, 2020
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations94
US10811516B2Oct 20, 2020
Structure and formation method of semiconductor device structure with gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10355135B2Jul 16, 2019
Semiconductor structure and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10164050B2Dec 25, 2018
Structure and formation method of semiconductor device structure with gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9653605B2May 16, 2017
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9620417B2Apr 11, 2017
Apparatus and method of manufacturing fin-FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10163898B2Dec 25, 2018
FinFETs and methods of forming FinFETs
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US9991385B2Jun 5, 2018
Enhanced volume control by recess profile control
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9564528B2Feb 7, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US9508719B2Nov 29, 2016
Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US10818794B2Oct 27, 2020
Semiconductor structure and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10497701B2Dec 3, 2019
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9853154B2Dec 26, 2017
Embedded source or drain region of transistor with downward tapered region under facet region
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9799771B2Oct 24, 2017
FinFET and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9627512B2Apr 18, 2017
Field effect transistor with non-doped channel
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9142672B2Sep 22, 2015
Strained source and drain (SSD) structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10515958B2Dec 24, 2019
FinFETs and methods of forming FinFETs
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9929254B2Mar 27, 2018
Method of manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9559207B2Jan 31, 2017
Semiconductor device having epitaxy structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9646871B2May 9, 2017
Semiconductor structure with shallow trench isolation and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US11120974B2Sep 14, 2021
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12051752B2Jul 30, 2024
Embedded source or drain region of transistor with downward tapered region under facet region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11721762B2Aug 8, 2023
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11705519B2Jul 18, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11631748B2Apr 18, 2023
Structure and formation method of semiconductor device structure with gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11594534B2Feb 28, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11594635B2Feb 28, 2023
Embedded source or drain region of transistor with downward tapered region under facet region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342458B2May 24, 2022
Semiconductor structure and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11158744B2Oct 26, 2021
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11043593B2Jun 22, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11018259B2May 25, 2021
Semiconductor device comprising gate structure and doped gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11004845B2May 11, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964819B2Mar 30, 2021
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10923353B2Feb 16, 2021
Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10879399B2Dec 29, 2020
Method of manufacturing semiconductor device comprising doped gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10910496B2Feb 2, 2021
FinFET device with asymmetrical drain/source feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10665719B2May 26, 2020
FinFET device with asymmetrical drain/source feature
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12446294B2Oct 14, 2025
Method of manufacturing semiconductor devices having different gate dielectric thickness within one transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11424165B2Aug 23, 2022
Method of manufacturing semiconductor devices having different gate dielectric thickness within one transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10840378B2Nov 17, 2020
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10804396B2Oct 13, 2020
Embedded source or drain region of transistor with downward tapered region under facet region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10692701B2Jun 23, 2020
Dry etching apparatus
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10686077B2Jun 16, 2020
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10636788B2Apr 28, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10340382B2Jul 2, 2019
Embedded source or drain region of transistor with downward tapered region under facet region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10164109B2Dec 25, 2018
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10164108B2Dec 25, 2018
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10084060B2Sep 25, 2018
Semiconductor structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10068982B2Sep 4, 2018
Structure and formation method of semiconductor device structure with metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9978648B2May 22, 2018
Manufacturing method of semiconductor device with regrown undoped channel and regrown S/D regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
Showing the top 50 of 62 patents by PatentIndex Score.