P

Inventor

CHEN CHIH-SHAN

TW29 patents
⚠️ This page may combine multiple inventors who share the name “CHEN CHIH-SHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

27 patents
US9812363B1Nov 7, 2017

FinFET device and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD237 citations99
US10522408B2Dec 31, 2019

FinFET device and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10510875B2Dec 17, 2019

Source and drain structure with reduced contact resistance and enhanced mobility

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10163715B2Dec 25, 2018

FinFET device and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10163898B2Dec 25, 2018

FinFETs and methods of forming FinFETs

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US10038095B2Jul 31, 2018

V-shape recess profile for embedded source/drain epitaxy

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations83
US9527721B2Dec 27, 2016

Movement microelectromechanical systems (MEMS) package

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations81
US11545562B2Jan 3, 2023

Source and drain structure with reduced contact resistance and enhanced mobility

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10497701B2Dec 3, 2019

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10515958B2Dec 24, 2019

FinFETs and methods of forming FinFETs

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9537008B2Jan 3, 2017

Source/drain structure of semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12237403B2Feb 25, 2025

Structure of a fin field effect transistor (FinFET) comprising epitaxial structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12002855B2Jun 4, 2024

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11626508B2Apr 11, 2023

Structure of a fin field effect transistor (FinFET)

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11594534B2Feb 28, 2023

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11522050B2Dec 6, 2022

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11121255B2Sep 14, 2021

V-shape recess profile for embedded source/drain epitaxy

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11004845B2May 11, 2021

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937894B2Mar 2, 2021

Structure of a fin field effect transistor (FinFET)

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12432955B2Sep 30, 2025

Source and drain structure with reduced contact resistance and enhanced mobility

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10636788B2Apr 28, 2020

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10535757B2Jan 14, 2020

Structure of a fin field effect transistor (FinFET)

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10158006B2Dec 18, 2018

Source/drain structure of a fin field effect transistor (FinFET)

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10868005B2Dec 15, 2020

FinFETs and methods of forming finFETs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10763366B2Sep 1, 2020

V-shape recess profile for embedded source/drain epitaxy

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10651309B2May 12, 2020

V-shape recess profile for embedded source/drain epitaxy

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11984478B2May 14, 2024

Forming source and drain features in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations43

TAIWAN SEMICONDUCTOR MFG

1 patent

LITE ON ELECTRONICS GUANGZHOU

1 patent