Inventor
GARDNER SANAZ
US21 patents
⚠️ This page may combine multiple inventors who share the name “GARDNER SANAZ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
19 patentsUS10096683B2Oct 9, 2018
Group III-N transistor on nanoscale template structures
INTEL CORP5 citations84
US9847448B2Dec 19, 2017
Forming LED structures on silicon fins
INTEL CORP8 citations84
US9716149B2Jul 25, 2017
Group III-N transistors on nanoscale template structures
INTEL CORP5 citations84
US9362369B2Jun 7, 2016
Group III-N transistors on nanoscale template structures
INTEL CORP3 citations84
US11004982B2May 11, 2021
Gate for a transistor
INTEL CORP5 citations73
US10665577B2May 26, 2020
Co-integrated III-N voltage regulator and RF power amplifier for envelope tracking systems
INTEL CORP3 citations73
US10347544B2Jul 9, 2019
Co-planar p-channel and n-channel gallium nitride-based transistors on silicon and techniques for forming same
INTEL CORP2 citations73
US10032911B2Jul 24, 2018
Wide band gap transistor on non-native semiconductor substrate
INTEL CORP5 citations73
US11764306B2Sep 19, 2023
Multi-layer crystalline back gated thin film transistor
INTEL CORP2 citations72
US11152514B2Oct 19, 2021
Multi-layer crystalline back gated thin film transistor
INTEL CORP3 citations72
US9837499B2Dec 5, 2017
Self-aligned gate last III-N transistors
INTEL CORP2 citations70
US10580895B2Mar 3, 2020
Wide band gap transistors on non-native semiconductor substrates
INTEL CORP1 citations63
US9219079B2Dec 22, 2015
Group III-N transistor on nanoscale template structures
INTEL CORP2 citations63
US11031305B2Jun 8, 2021
Laterally adjacent and diverse group III-N transistors
INTEL CORP0 citations62
US12119409B2Oct 15, 2024
Multi-layer crystalline back gated thin film transistor
INTEL CORP0 citations61
US10847653B2Nov 24, 2020
Semiconductor device having metallic source and drain regions
INTEL CORP0 citations52
US10804359B2Oct 13, 2020
Geometric manipulation of 2DEG region in source/drain extension of GaN transistor
INTEL CORP0 citations52
US10243069B2Mar 26, 2019
Gallium nitride transistor having a source/drain structure including a single-crystal portion abutting a 2D electron gas
INTEL CORP0 citations52
US9847432B2Dec 19, 2017
Forming III-V device structures on (111) planes of silicon fins
INTEL CORP0 citations52