P

Inventor

GARDNER SANAZ

US21 patents
⚠️ This page may combine multiple inventors who share the name “GARDNER SANAZ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

19 patents
US10096683B2Oct 9, 2018

Group III-N transistor on nanoscale template structures

INTEL CORP5 citations84
US9847448B2Dec 19, 2017

Forming LED structures on silicon fins

INTEL CORP8 citations84
US9716149B2Jul 25, 2017

Group III-N transistors on nanoscale template structures

INTEL CORP5 citations84
US9362369B2Jun 7, 2016

Group III-N transistors on nanoscale template structures

INTEL CORP3 citations84
US11004982B2May 11, 2021

Gate for a transistor

INTEL CORP5 citations73
US10665577B2May 26, 2020

Co-integrated III-N voltage regulator and RF power amplifier for envelope tracking systems

INTEL CORP3 citations73
US10347544B2Jul 9, 2019

Co-planar p-channel and n-channel gallium nitride-based transistors on silicon and techniques for forming same

INTEL CORP2 citations73
US10032911B2Jul 24, 2018

Wide band gap transistor on non-native semiconductor substrate

INTEL CORP5 citations73
US11764306B2Sep 19, 2023

Multi-layer crystalline back gated thin film transistor

INTEL CORP2 citations72
US11152514B2Oct 19, 2021

Multi-layer crystalline back gated thin film transistor

INTEL CORP3 citations72
US9837499B2Dec 5, 2017

Self-aligned gate last III-N transistors

INTEL CORP2 citations70
US10580895B2Mar 3, 2020

Wide band gap transistors on non-native semiconductor substrates

INTEL CORP1 citations63
US9219079B2Dec 22, 2015

Group III-N transistor on nanoscale template structures

INTEL CORP2 citations63
US11031305B2Jun 8, 2021

Laterally adjacent and diverse group III-N transistors

INTEL CORP0 citations62
US12119409B2Oct 15, 2024

Multi-layer crystalline back gated thin film transistor

INTEL CORP0 citations61
US10847653B2Nov 24, 2020

Semiconductor device having metallic source and drain regions

INTEL CORP0 citations52
US10804359B2Oct 13, 2020

Geometric manipulation of 2DEG region in source/drain extension of GaN transistor

INTEL CORP0 citations52
US10243069B2Mar 26, 2019

Gallium nitride transistor having a source/drain structure including a single-crystal portion abutting a 2D electron gas

INTEL CORP0 citations52
US9847432B2Dec 19, 2017

Forming III-V device structures on (111) planes of silicon fins

INTEL CORP0 citations52

THEN HAN WUI

1 patent

UNIV CALIFORNIA

1 patent