Inventor

FUTASE TAKUYA

JP37 patents

⚠️ This page may combine multiple inventors who share the name “FUTASE TAKUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUTASE TAKUYA

RENESAS ELECTRONICS CORP

Manufacturing method of semiconductor device including filling a connecting hole with metal film

Method for manufacturing a semiconductor integrated circuit device circuit device

Method of manufacturing semiconductor integrated circuit device

Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device

Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device

Method of manufacturing semiconductor device

Method of manufacturing a semiconductor device

Method of manufacturing semiconductor device

Method of manufacturing semiconductor device

SANDISK TECHNOLOGIES INC

Air gaps structures for damascene metal patterning

Barrier layer stack for bit line air gap formation

Early bit line air gap formation

Metal indentation to increase inter-metal breakdown voltage

Contact hole collimation using etch-resistant walls

Metal line with increased inter-metal breakdown voltage

NAND flash memory integrated circuits and processes with controlled gate height

Conductive line structure with openings

SANDISK TECHNOLOGIES LLC

Resistive memory cell programmed by metal alloy formation and method of operating thereof

Buried etch stop layer for damascene bit line formation

Double trench isolation

Source line formation and structure

FUTASE TAKUYA

Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device

Method of manufacturing semiconductor device

Method for manufacturing a semiconductor integrated circuit device

Manufacturing method of semiconductor device

WESTERN DIGITAL TECH INC

Low resistance monosilicide electrode for phase change memory and methods of making the same

Low resistance monosilicide electrode for phase change memory and methods of making the same

Low resistance multi-layer electrode for phase change memory and methods of making the same

Memory array containing capped aluminum access lines and method of making the same

RENESAS TECH CORP

Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device

Manufacturing method of semiconductor device

Method of dry cleaning silicon surface prior to forming self-aligned nickel silicide layer

SANDISK 3D LLC

Silicided bit line for reversible-resistivity memory

Three-dimensional resistive random access memory containing self-aligned memory elements

HITACHI LTD

Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device

YAMAGUCHI TADASHI

Manufacturing method of semiconductor device

OKADA SHIGENARI

Method of manufacturing a semiconductor device