Inventor
HÄBERLEN OLIVER
AT25 patents
⚠️ This page may combine multiple inventors who share the name “HÄBERLEN OLIVER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AUSTRIA AG
13 patentsUS9837520B2Dec 5, 2017
Group III-nitride-based enhancement mode transistor having a multi-heterojunction fin structure
INFINEON TECHNOLOGIES AUSTRIA AG6 citations84
US9443787B2Sep 13, 2016
Electronic component and method
INFINEON TECHNOLOGIES AUSTRIA AG7 citations84
US9768258B1Sep 19, 2017
Substrate structure, semiconductor component and method
INFINEON TECHNOLOGIES AUSTRIA AG11 citations81
US10600710B2Mar 24, 2020
Semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG3 citations73
US10431504B2Oct 1, 2019
Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG2 citations73
US11114554B2Sep 7, 2021
High-electron-mobility transistor having a buried field plate
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US12068379B2Aug 20, 2024
Semiconductor device having a lateral transistor device and an inverter that includes the semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations59
US10388736B2Aug 20, 2019
Methods of forming substrate structures and semiconductor components
INFINEON TECHNOLOGIES AUSTRIA AG1 citations59
US10304923B2May 28, 2019
Method of forming a vertical potential short in a periphery region of a III-nitride stack for preventing lateral leakage
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US10038051B2Jul 31, 2018
Vertical potential short in the periphery region of a III-nitride stack for preventing lateral leakage
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US9620472B2Apr 11, 2017
Method of manufacturing an electronic component
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US12431886B2Sep 30, 2025
Electronic circuit with a transistor device and a clamp circuit and method
INFINEON TECHNOLOGIES AUSTRIA AG0 citations47
US9590048B2Mar 7, 2017
Electronic device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations42
INFINEON TECHNOLOGIES AUSTRIA
6 patentsUS9048303B1Jun 2, 2015
Group III-nitride-based enhancement mode transistor
INFINEON TECHNOLOGIES AUSTRIA32 citations94
US9337279B2May 10, 2016
Group III-nitride-based enhancement mode transistor
INFINEON TECHNOLOGIES AUSTRIA6 citations84
US9142550B2Sep 22, 2015
High-voltage cascaded diode with HEMT and monolithically integrated semiconductor diode
INFINEON TECHNOLOGIES AUSTRIA9 citations84
US9356130B2May 31, 2016
HEMT with compensation structure
INFINEON TECHNOLOGIES AUSTRIA1 citations52
US9041066B2May 26, 2015
Protection device for normally-on and normally-off high electron mobility transistors
INFINEON TECHNOLOGIES AUSTRIA1 citations52
US8835932B2Sep 16, 2014
Normally-off compound semiconductor tunnel transistor with a plurality of charge carrier gases
INFINEON TECHNOLOGIES AUSTRIA0 citations52