Inventor

GU MAN

US22 patents

⚠️ This page may combine multiple inventors who share the name “GU MAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GU MAN

GLOBALFOUNDRIES US INC

Carbon implantation for thicker gate silicide

Substrates of semiconductor devices having varying thicknesses of semiconductor layers

Transistors with multiple silicide layers

FinFET with shorter fin height in drain region than source region and related method

Lateral bipolar transistor

Bipolar junction transistors including a stress liner

IC structure with fin having subfin extents with different lateral dimensions

Integrated circuit structure including asymmetric, recessed source and drain region and method for forming same

FinFET with shorter fin height in drain region than source region and related method

Field-effect transistors with diffusion blocking spacer sections

Trench isolation having three portions with different materials, and LDMOS FET including same

Passive devices over polycrystalline semiconductor fins

Epitaxial structures of a semiconductor device having a wide gate pitch

High-voltage semiconductor device structures

LDMOS finFET structure with buried insulator layer and method for forming same

Transistors with hybrid source/drain regions

Transistors with an asymmetrical source and drain

Methods of forming source/drain regions of a FinFET device and the resulting structures

GLOBALFOUNDRIES INC

Formation of epi source/drain material on transistor devices and the resulting structures

Laminated spacers for field-effect transistors

Spacer with laminate liner

Semiconductor devices with robust low-k sidewall spacers and method for producing the same