Inventor

DURIEZ BLANDINE

BE77 patents

⚠️ This page may combine multiple inventors who share the name “DURIEZ BLANDINE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DURIEZ BLANDINE

TAIWAN SEMICONDUCTOR MFG CO LTD

Vertical gate-all-around field effect transistors and methods of forming same

Semiconductor device and manufacturing method thereof

Localized heating in laser annealing process

Method of manufacturing a semiconductor device and a semiconductor device

Semiconductor device and formation thereof

Vertical gate-all-around field effect transistors

Method of forming ultra-thin nanowires

FinFET with channel backside passivation layer device and method

Multigate device having reduced contact resistivity

Crystalline semiconductor layer formed in BEOL processes

Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same

Method of manufacturing a semiconductor device and a semiconductor device

Crystalline semiconductor layer formed in BEOL processes

Method of forming source/drain structure with first and second epitaxial layers

FinFET with two fins on STI

Semiconductor device and method of fabricating the same

High density nanowire array

Method for forming FinFET devices

Elongated semiconductor structure planarization

Multigate device having reduced contact resistivity

Multigate device having reduced contact resistivity

Crystalline semiconductor layer formed in BEOL processes

Method of manufacturing a heterostructure or a stacked semiconductor structure having a silicon-germanium interface

Localized heating in laser annealing process

Semiconductor device and method

Transistor, integrated circuit, and manufacturing method

Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same

Localized protection layer for laser annealing process

Method of manufacturing a semiconductor device and a semiconductor device

Heterostructure oxide semiconductor vertical gate-all-around (VGAA) transistor and methods for making the same

Germanium containing nanowires and methods for forming the same

Transistor, integrated circuit, and manufacturing method

GE based semiconductor device and a method for manufacturing the same

Localized protection layer for laser annealing process

Semiconductor structure with low defect

Semiconductor device and method

Semiconductor device and formation thereof

Method of fabricating semiconductor device with nanowires

Forming fins on the sidewalls of a sacrificial fin to form a FinFET

Method of forming semiconductor device having carbon nanotube

Method of manufacturing a semiconductor device and a semiconductor device

Method of forming semiconductor device having carbon nanotube

Method of manufacturing a semiconductor device and a semiconductor device

Heterostructure oxide semiconductor vertical gate-all-around (VGAA) transistor and methods for making the same

Semiconductor device and method of fabricating the same

VELLIANITIS GEORGIOS

MOSFETs with channels on nothing and methods for forming the same

FinFET with a buried semiconductor material between two fins

TAIWAN SEMICONDUCTOR MFG

Field effect transistors and methods of forming same

DONKERS JOHANNES JOSEPHUS THEODORUS MARINUS

Method of manufacturing IC comprising a bipolar transistor and IC

VANHOUCKE TONY

Heterojunction bipolar transistor manufacturing method and integrated circuit comprising a heterojunction bipolar transistor