Inventor
HA DAEWON
KR49 patents
⚠️ This page may combine multiple inventors who share the name “HA DAEWON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
42 patentsUS7907437B2Mar 15, 2011
Resistance variable memory device and method of writing data
SAMSUNG ELECTRONICS CO LTD19 citations90
US11282839B2Mar 22, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD9 citations86
US9276087B2Mar 1, 2016
Methods of manufacturing FINFET semiconductor devices using sacrificial gate patterns and selective oxidization of a fin
SAMSUNG ELECTRONICS CO LTD14 citations83
US11798947B2Oct 24, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations73
US11295958B2Apr 5, 2022
Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US9208875B2Dec 8, 2015
Resistive nonvolatile memory device having cells programmed to achieve a target resistance value at a target time and writing method thereof
SAMSUNG ELECTRONICS CO LTD4 citations73
US12356665B2Jul 8, 2025
Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods
SAMSUNG ELECTRONICS CO LTD2 citations72
US11888044B2Jan 30, 2024
Semiconductor devices with stacked transistor structures
SAMSUNG ELECTRONICS CO LTD4 citations72
US11329066B2May 10, 2022
Semiconductor devices having multi-channel active regions and methods of forming same
SAMSUNG ELECTRONICS CO LTD2 citations71
US10804403B2Oct 13, 2020
Method of fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations71
US10361310B2Jul 23, 2019
Method of fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations71
US8014190B2Sep 6, 2011
Resistance variable memory device and method of writing data
SAMSUNG ELECTRONICS CO LTD5 citations71
US12317580B2May 27, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations64
US12255206B2Mar 18, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations63
US12183741B2Dec 31, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations63
US12170333B2Dec 17, 2024
Integrated circuit devices having uniformly formed structure
SAMSUNG ELECTRONICS CO LTD0 citations63
US12112952B2Oct 8, 2024
Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same
SAMSUNG ELECTRONICS CO LTD0 citations63
US12225703B2Feb 11, 2025
Methods of manufacturing a semiconductor device using a mask
SAMSUNG ELECTRONICS CO LTD0 citations62
US12199152B2Jan 14, 2025
Selective single diffusion/electrical barrier
SAMSUNG ELECTRONICS CO LTD0 citations62
US11978805B2May 7, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11832430B2Nov 28, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11588054B2Feb 21, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11004981B2May 11, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12376285B2Jul 29, 2025
Memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11908861B2Feb 20, 2024
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US11798949B2Oct 24, 2023
Semiconductor devices having multi-channel active regions and methods of forming same
SAMSUNG ELECTRONICS CO LTD1 citations61
US9130040B2Sep 8, 2015
FinFET semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations61
US8040720B2Oct 18, 2011
Phase-change memory device including biasing circuit
SAMSUNG ELECTRONICS CO LTD5 citations61
US12166097B2Dec 10, 2024
Semiconductor devices with stacked transistor structures
SAMSUNG ELECTRONICS CO LTD0 citations60
US12456647B2Oct 28, 2025
Nanosheet transistor devices and related fabrication methods
SAMSUNG ELECTRONICS CO LTD0 citations58
US12593453B2Mar 31, 2026
Ferroelectric memory device
SAMSUNG ELECTRONICS CO LTD0 citations57
US12588269B2Mar 24, 2026
Semiconductor devices including separation structure
SAMSUNG ELECTRONICS CO LTD0 citations52
US12563738B2Feb 24, 2026
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US12513996B2Dec 30, 2025
Three-dimensional semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12490494B2Dec 2, 2025
Three-dimensional semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12543301B2Feb 3, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12328909B2Jun 10, 2025
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12159939B2Dec 3, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US9431522B2Aug 30, 2016
Methods of manufacturing FINFET semiconductor devices using sacrificial gate patterns and selective oxidization of a fin
SAMSUNG ELECTRONICS CO LTD1 citations51
US12550372B2Feb 10, 2026
Semiconductor device including semiconductor patterns having varied thicknesses
SAMSUNG ELECTRONICS CO LTD0 citations49
US12218133B2Feb 4, 2025
Three-dimensional semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US12191368B2Jan 7, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations48