P

Inventor

HA DAEWON

KR49 patents
⚠️ This page may combine multiple inventors who share the name “HA DAEWON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

42 patents
US7907437B2Mar 15, 2011

Resistance variable memory device and method of writing data

SAMSUNG ELECTRONICS CO LTD19 citations90
US11282839B2Mar 22, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD9 citations86
US9276087B2Mar 1, 2016

Methods of manufacturing FINFET semiconductor devices using sacrificial gate patterns and selective oxidization of a fin

SAMSUNG ELECTRONICS CO LTD14 citations83
US11798947B2Oct 24, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations73
US11295958B2Apr 5, 2022

Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US9208875B2Dec 8, 2015

Resistive nonvolatile memory device having cells programmed to achieve a target resistance value at a target time and writing method thereof

SAMSUNG ELECTRONICS CO LTD4 citations73
US12356665B2Jul 8, 2025

Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods

SAMSUNG ELECTRONICS CO LTD2 citations72
US11888044B2Jan 30, 2024

Semiconductor devices with stacked transistor structures

SAMSUNG ELECTRONICS CO LTD4 citations72
US11329066B2May 10, 2022

Semiconductor devices having multi-channel active regions and methods of forming same

SAMSUNG ELECTRONICS CO LTD2 citations71
US10804403B2Oct 13, 2020

Method of fabricating semiconductor devices

SAMSUNG ELECTRONICS CO LTD3 citations71
US10361310B2Jul 23, 2019

Method of fabricating semiconductor devices

SAMSUNG ELECTRONICS CO LTD3 citations71
US8014190B2Sep 6, 2011

Resistance variable memory device and method of writing data

SAMSUNG ELECTRONICS CO LTD5 citations71
US12317580B2May 27, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations64
US12255206B2Mar 18, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations63
US12183741B2Dec 31, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations63
US12170333B2Dec 17, 2024

Integrated circuit devices having uniformly formed structure

SAMSUNG ELECTRONICS CO LTD0 citations63
US12112952B2Oct 8, 2024

Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

SAMSUNG ELECTRONICS CO LTD0 citations63
US12225703B2Feb 11, 2025

Methods of manufacturing a semiconductor device using a mask

SAMSUNG ELECTRONICS CO LTD0 citations62
US12199152B2Jan 14, 2025

Selective single diffusion/electrical barrier

SAMSUNG ELECTRONICS CO LTD0 citations62
US11978805B2May 7, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11832430B2Nov 28, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11588054B2Feb 21, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11004981B2May 11, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12376285B2Jul 29, 2025

Memory device

SAMSUNG ELECTRONICS CO LTD0 citations61
US11908861B2Feb 20, 2024

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations61
US11798949B2Oct 24, 2023

Semiconductor devices having multi-channel active regions and methods of forming same

SAMSUNG ELECTRONICS CO LTD1 citations61
US9130040B2Sep 8, 2015

FinFET semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations61
US8040720B2Oct 18, 2011

Phase-change memory device including biasing circuit

SAMSUNG ELECTRONICS CO LTD5 citations61
US12166097B2Dec 10, 2024

Semiconductor devices with stacked transistor structures

SAMSUNG ELECTRONICS CO LTD0 citations60
US12456647B2Oct 28, 2025

Nanosheet transistor devices and related fabrication methods

SAMSUNG ELECTRONICS CO LTD0 citations58
US12593453B2Mar 31, 2026

Ferroelectric memory device

SAMSUNG ELECTRONICS CO LTD0 citations57
US12588269B2Mar 24, 2026

Semiconductor devices including separation structure

SAMSUNG ELECTRONICS CO LTD0 citations52
US12563738B2Feb 24, 2026

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US12513996B2Dec 30, 2025

Three-dimensional semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US12490494B2Dec 2, 2025

Three-dimensional semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US12543301B2Feb 3, 2026

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US12328909B2Jun 10, 2025

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US12159939B2Dec 3, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US9431522B2Aug 30, 2016

Methods of manufacturing FINFET semiconductor devices using sacrificial gate patterns and selective oxidization of a fin

SAMSUNG ELECTRONICS CO LTD1 citations51
US12550372B2Feb 10, 2026

Semiconductor device including semiconductor patterns having varied thicknesses

SAMSUNG ELECTRONICS CO LTD0 citations49
US12218133B2Feb 4, 2025

Three-dimensional semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations49
US12191368B2Jan 7, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations48

HA DAEWON

2 patents

LEE JUNG HYUK

2 patents

PARK SUNGIL

1 patent

JEON YOUNG-JOO

1 patent

YU JIHYUNG

1 patent