Inventor
EICHLER STEFAN
DE18 patents
⚠️ This page may combine multiple inventors who share the name “EICHLER STEFAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREIBERGER COMPOUND MAT GMBH
11 patentsUS6355910B1Mar 12, 2002
Heating element for heating crucibles and arrangement of heating elements
FREIBERGER COMPOUND MAT GMBH18 citations81
US9368585B2Jun 14, 2016
Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal
FREIBERGER COMPOUND MAT GMBH8 citations77
US7410540B2Aug 12, 2008
Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal
FREIBERGER COMPOUND MAT GMBH8 citations70
US11170989B2Nov 9, 2021
Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity
FREIBERGER COMPOUND MAT GMBH2 citations67
US10460924B2Oct 29, 2019
Process for producing a gallium arsenide substrate which includes marangoni drying
FREIBERGER COMPOUND MAT GMBH4 citations67
US8048224B2Nov 1, 2011
Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate
FREIBERGER COMPOUND MAT GMBH3 citations61
US8025729B2Sep 27, 2011
Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer
FREIBERGER COMPOUND MAT GMBH5 citations59
US12205815B2Jan 21, 2025
Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity
FREIBERGER COMPOUND MAT GMBH0 citations56
US11505847B2Nov 22, 2022
Method and apparatus for Ga-recovery
FREIBERGER COMPOUND MAT GMBH0 citations56
US8815392B2Aug 26, 2014
Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient
FREIBERGER COMPOUND MAT GMBH0 citations45
US11965266B2Apr 23, 2024
Device and method of manufacturing AIII-BV-crystals and substrate wafers manufactured thereof free of residual stress and dislocations
FREIBERGER COMPOUND MAT GMBH0 citations44
KRETZER ULRICH
2 patentsUS8771560B2Jul 8, 2014
Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal
KRETZER ULRICH2 citations56
US8329295B2Dec 11, 2012
Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient
KRETZER ULRICH4 citations55
LEIBIGER GUNNAR
2 patentsUS9856579B2Jan 2, 2018
Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy
LEIBIGER GUNNAR0 citations46
US9074297B2Jul 7, 2015
Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy
LEIBIGER GUNNAR1 citations46