P

Inventor

GENG JINGJING

CN15 patents

Patents

15 patents
US11950418B2Apr 2, 2024

Method and structure for forming stairs in three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD1 citations69
US12532513B2Jan 20, 2026

Method of forming top select gate trenches

YANGTZE MEMORY TECH CO LTD0 citations61
US12021126B2Jun 25, 2024

Method of forming top select gate trenches

YANGTZE MEMORY TECH CO LTD0 citations61
US11990506B2May 21, 2024

Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations61
US11985824B2May 14, 2024

Three-dimensional memory devices having dummy channel structures and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations60
US11711921B2Jul 25, 2023

Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations60
US12495555B2Dec 9, 2025

Method and structure for forming stairs in three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD0 citations59
US12349351B2Jul 1, 2025

Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations59
US12082414B2Sep 3, 2024

Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations59
US11552097B2Jan 10, 2023

Method and structure for forming stairs in three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD0 citations59
US11502098B2Nov 15, 2022

Methods for forming three-dimensional memeory devices with drain-select-gate cut structures

YANGTZE MEMORY TECH CO LTD0 citations59
US11937427B2Mar 19, 2024

Method for forming three-dimensional memory device with sacrificial channels

YANGTZE MEMORY TECH CO LTD0 citations58
US11800707B2Oct 24, 2023

Three-dimensional memory device with reduced local stress

YANGTZE MEMORY TECH CO LTD0 citations58
US12193229B2Jan 7, 2025

Semiconductor device fabrication

YANGTZE MEMORY TECH CO LTD0 citations49
US12048153B2Jul 23, 2024

Vertical memory devices

YANGTZE MEMORY TECH CO LTD0 citations49