P

Inventor

MUKAE YUSUKE

JP12 patents

Patents

12 patents
US10608010B2Mar 31, 2020

Three-dimensional memory device containing replacement contact via structures and method of making the same

SANDISK TECHNOLOGIES LLC28 citations91
US10615123B2Apr 7, 2020

Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same

SANDISK TECHNOLOGIES LLC11 citations85
US11217532B2Jan 4, 2022

Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same

SANDISK TECHNOLOGIES LLC4 citations73
US10916504B2Feb 9, 2021

Three-dimensional memory device including electrically conductive layers with molybdenum-containing liners

SANDISK TECHNOLOGIES LLC5 citations72
US11894298B2Feb 6, 2024

Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers

SANDISK TECHNOLOGIES LLC2 citations71
US11289416B2Mar 29, 2022

Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers

SANDISK TECHNOLOGIES LLC4 citations71
US11377733B2Jul 5, 2022

Fluorine-free tungsten deposition process employing in-situ oxidation and apparatuses for effecting the same

SANDISK TECHNOLOGIES LLC1 citations62
US12414296B2Sep 9, 2025

Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement

SANDISK TECHNOLOGIES LLC0 citations61
US12185540B2Dec 31, 2024

Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement

SANDISK TECHNOLOGIES LLC0 citations51
US12101936B2Sep 24, 2024

Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement

SANDISK TECHNOLOGIES LLC0 citations51
US12029037B2Jul 2, 2024

Three-dimensional memory device with discrete charge storage elements and methods for forming the same

SANDISK TECHNOLOGIES LLC0 citations51
US12588209B2Mar 24, 2026

Three-dimensional memory device containing composite word lines including a respective fluorine-free capping sublayer and methods of forming the same

SANDISK TECHNOLOGIES LLC0 citations46