Inventor

HINOUE TATSUYA

JP44 patents

⚠️ This page may combine multiple inventors who share the name “HINOUE TATSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HINOUE TATSUYA

SANDISK TECHNOLOGIES LLC

Three-dimensional memory device containing fluorine-free tungsten—word lines and methods of manufacturing the same

Three-dimensional memory device containing tubular blocking dielectric spacers

Method for etching bottom punch-through opening in a memory film of a multi-tier three-dimensional memory device

Three-dimensional memory device including split memory cells and methods of forming the same

Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same

Three-dimensional memory device having a slimmed aluminum oxide blocking dielectric and method of making same

Three-dimensional memory device including laterally-undulating memory material layers and methods for forming the same

Three-dimensional memory device including laterally-undulating memory material layers and methods for forming the same

Spacerless source contact layer replacement process and three-dimensional memory device formed by the process

Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same

Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same

Three-dimensional memory device containing auxiliary support pillar structures and method of making the same

Three-dimensional memory device with backside support pillar structures and methods of forming the same

Spacerless source contact layer replacement process and three-dimensional memory device formed by the process

Three-dimensional memory device with backside support pillar structures and methods of forming the same

Three-dimensional memory device and method of making thereof using double pitch word line formation

Three-dimensional memory device with replacement select gate electrodes and methods of manufacturing the same

Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement

Three-dimensional memory device and method of making thereof using selective metal nitride deposition on dielectric metal oxide blocking dielectric

Semiconductor device having edge seal and method of making thereof without metal hard mask arcing

Three-dimensional memory device and method of making thereof using double pitch word line formation

Three-dimensional memory device and method of making thereof using double pitch word line formation

Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement

Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement

Three-dimensional memory device with discrete charge storage elements and methods for forming the same

High aspect ratio via fill process employing selective metal deposition and structures formed by the same

Systems and methods for non-destructive inspection of semiconductor devices using reflective X-ray microscope tomographic imaging

Three-dimensional memory device containing composite word lines including a respective fluorine-free capping sublayer and methods of forming the same

HITACHI GLOBAL STORAGE TECH

Magnetic recording medium and magnetic memory device for high density recording

Magnetic recording medium for high density recording

Magnetic recording medium and magnetic recording apparatus

Magnetic recording medium

Magnetic recording medium

Longitudinal multi-layer magnetic recording medium

Magnetic recording medium having a cobalt-based alloy film for high density recording and magnetic storage device using same

Magnetic recording media with ultra-high recording density

RENESAS TECH CORP

Method for manufacturing semiconductor integrated circuit device

Method for manufacturing semiconductor integrated circuit device

HGST Netherlands BV

Magnetic recording medium utilizing a recording layer having more and less concentrated parts of a nonmagnetic element in an in-plane direction and manufacturing method thereof

Granular media with a high-Hk assist layer for microwave-assisted magnetic recording

HITACHI GLOBAL STORAGE TECH NL

Magnetic recording medium having a cobalt-based alloy film for high density recording and magnetic storage device using same

HINOUE TATSUYA

Magnetic recording medium utilizing a recording layer having more and less concentrated parts of a nonmagnetic element in an in-plane direction and a nonmagnetic layer

ONO TOSHINORI

Magnetic recording medium having non-magnetic separating regions and methods of manufacturing the same

YAKUSHIJI HIROSHI

Magnetic recording medium having recording regions and separating regions and methods of manufacturing the same